Transistors
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S
!Features
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1037AK /
2SA1576A / 2SA1774H /
2SA2029 / 2SA933AS.
!
External dimensions
(Units : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95
1.9
1.3
2.0
(1)
(2)
0.2
0.5 0.5
(3)
0.4
(3)
0.3
1.6
2.8
2.1
0.8
0.2
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
!
Structure
Epitaxial planar type
NPN silicon transistor
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
0~0.1
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
2SC1740S
4±0.2
2±0.2
3±0.2
0.2
1.2
0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13
0~0.1
0.5
0.45+0.15
−
0.05
0.15Max.
5
3Min.
2.5 +0.4
−
0.1
0.5
0.45 +0.15
−
0.05
(1) (2) (3)
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes h
FE
!
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
−55~+150
°C
°C
W
Unit
V
V
V
A
0.7
1.0
1.6
(2)
Transistors
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
180
2
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
!
Packaging specifications and h
FE
Package
Code
Type
2SC2412K
2SC4081
2SC4617
2SC5658
2SC1740S
h
FE
QRS
QRS
QRS
QRS
QRS
−
−
−
−
−
−
−
−
−
−
Basic ordering
unit (pieces)
T146
3000
Taping
T106
3000
−
TL
3000
−
−
T2L
8000
−
−
−
Bulk
TP
5000
−
−
−
−
h
FE
values are classified as follows :
Item
h
FE
Q
120~270
R
180~390
S
270~560
!
Electrical characterristic curves
50
100
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
80
0.50mA
mA
0.45
A
0.40m
0.35mA
0.30mA
10
Ta=25°C
30µA
27µA
8
24µA
21µA
60
0.25mA
0.20mA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
40
0.15mA
0.10mA
4
12µA
9µA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
2
6µA
3µA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics (
Ι
)
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
Transistors
500
Ta=25°C
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
500
Ta=100°C
V
CE
=5V
3V
1V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
V
CE
=5V
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
200
DC CURRENT GAIN : h
FE
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.5
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=10
0.5
TRANSITION FREQUENCY : f
T
(MHz)
I
C
/I
B
=50
500
Ta=25°C
V
CE
=6V
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
0.1
0.05
Ta=100°C
25°C
−55°C
200
0.02
100
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.9 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
20
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
10
Cib
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25°C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant
vs. emitter current
RF/无线
