Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
s
Features
q
q
q
q
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
4.2±0.2
High-speed switching
High collector to base voltage V
CBO
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
800
800
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
Solder Dip
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
14.0±0.5
4.0
s
Absolute Maximum Ratings
16.7±0.3
7.5±0.2
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
V
V
A
A
A
W
˚C
˚C
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
V
CEO(sus)
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO(sus)*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 200V
8
1.0
3
1.0
500
15
8
1
1.5
V
V
MHz
µs
µs
µs
min
typ
max
100
100
Unit
µA
µA
V
Test circuit
50/60Hz
mercury relay
L 25mH
120Ω
6V
1Ω
15V
X
Y
G
1
Power Transistors
P
C
— Ta
80
8
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
7
I
B
=1200mA
6
5
4
3
2
1
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
400mA
300mA
200mA
150mA
100mA
50mA
20mA
1000mA
800mA
600mA
2SC4638
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=5
30
10
3
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
25˚C
T
C
=100˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
(2)
(3)
(1)
Collector current I
C
(A)
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
1000
I
C
/I
B
=5
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
100
T
C
=100˚C
30
–25˚C
10
3
1
0.3
0.1
0.01 0.03
25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
300
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(I
B1
=–I
B2
)
V
CC
=250V
T
C
=25˚C
t
stg
t
on
Area of safe operation (ASO)
10
3
1
0.3
0.1
0.03
0.01
1ms
10ms
DC
I
CP
I
C
t=0.5ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
0.1
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
1
0.3
0.1
0.03
0.01
t
f
Collector current I
C
(A)
8
Non repetitive pulse
0.003 T =25˚C
C
0
1
2
3
4
5
6
7
1
3
10
30
100
300
1000
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
Area of safe operation, reverse bias ASO
8
7
L
coil
=50µH
I
C
/I
B
=5
(I
B1
=–I
B2
)
T
C
=100˚C
2SC4638
Reverse bias ASO measuring circuit
L coil
I
B1
V
in
T.U.T
I
C
Collector current I
C
(A)
6
5
4
3
2
1
0
0
100 200 300 400 500 600 700 800
–I
B2
V
CC
t
W
Vclamp
Collector to emitter voltage V
CE
(V)
R
th(t)
— t
1000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
100
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
