Ordering number:ENN4409
2SA1830 : PNP Epitaxial Planar Silicon Transistor
2SC4734 : NPN Triple Diffused Planar Silicon Transistor
2SA1830/2SC4734
High-Voltage Driver Applications
Features
· Large current capacity (I
C
=2A).
· High breakdown voltage (V
CEO
≥400V).
· Possible to offer the 2SA1830/2SC4734 devices in a
tape reel packaging, which facilitates automatic
insertion.
Package Dimensions
unit:mm
2084B
[2SA1830/2SC4734]
10.5
1.9
4.5
1.2
2.6
1.4
1.2
7.5
1.6
0.5
1
2
3
0.5
1.0
8.5
( ) : 2SA1830
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.5
2.5
1 : Base
2 : Collector
3 : Emitter
SANYO : FLP
Ratings
(–)400
(–)400
(–)5
(–)2
(–)4
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)30V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
Ratings
min
typ
max
(–)1.0
(–)1.0
40*
(40)60
(25)15
(–)1.0
(–)1.0
200*
MHz
pF
V
V
Unit
µA
µA
* : The 2SA1830/2SC4734 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/53094MT (KOTO) AX-8318 No.4409–1/5
2SA1830/2SC4734
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test CIrcuit
See specified Test Circuit
Conditions
Ratings
min
(–)400
(–)400
(–)5
(0.12)
0.085
(3.0)
4.0
(0.3)
0.6
typ
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
RB
VR
50Ω
+
100μF
VBE=--5V
+
470μF
VCC=150V
RL
IB1
IB2
OUTPUT
10IB1=--10IB2=IC=500mA
RL=300Ω, RB=20Ω, at IC=500mA
For PNP, the polarity is reversed.
--200
IC -- VCE
2SA1830
--2.0mA
--1.8mA
--1.6mA
--1.4mA
200
IC -- VCE
2SC4734
Collector Current, IC – mA
Collector Current, IC – mA
--160
160
1.8
mA
1.6mA
1.4mA
1.2mA
--120
--1.2mA
--1.0mA
--0.8mA
--0.6mA
120
1.0mA
0.8mA
--80
80
0.6mA
40
--40
--0.4mA
--0.2mA
IB=0
0
--4
--8
--12
--16
--20
ITR04827
0.4mA
0.2mA
0
0
0
4
8
12
16
IB=0
20
ITR04828
Collector-to-Emitter Voltage, VCE – V
--2.0
--1.8
--1.6
IC -- VBE
Collector-to-Emitter Voltage, VCE – V
2.0
1.8
1.6
IC -- VBE
2SA1830
VCE=--10V
2SC4734
VCE=10V
Collector Current, IC – A
Collector Current, IC – A
--1.4
--1.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
25
°
C
--1.0
25
°
C
0.2
0.4
0.6
--25
°
C
Ta=
7
--0.8
--1.0
--1.2
--1.4
Ta=
7
0
0.8
--25
°
C
1.0
5
°
C
5
°
C
1.2
1.4
Base-to-Emitter Voltage, VBE – V
ITR04829
Base-to-Emitter Voltage, VBE – V
ITR04830
No.4409–2/5
2SA1830/2SC4734
3
2
hFE -- IC
Ta=75
°C
3
hFE -- IC
Ta=75
°C
25
°C
25
°C
2SA1830
VCE=--10V
2
2SC4734
VCE=10V
100
100
DC Current Gain, hFE
DC Current Gain, hFE
7
5
3
2
--25
°
C
7
5
3
2
--25
°C
10
7
5
3
3
5
7 --10
2
3
5 7 --100
2
3
10
7
5
3
Collector Current, IC –
3
2
5 7--1000 2 3
mA
ITR04831
2
3
5
7 10
2
3
5 7 100
2
3
VCE (sat) -- IC
2SA1830
IC / IB=10
Collector Current, IC –
5 7 1000
2 3
mA
ITR04832
VCE (sat) -- IC
2SC4734
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
--1.0
7
5
3
2
3
2
--0.1
7
5
3
3
5
7 --10
2
25
°C
Ta=75
°C
25
°
C
0.1
7
5
Ta=75
°C
--25
°C
3
5
7
10
2
3
5
7 100
2
3
7 1000
ITR04834
5
--25
°C
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC – mA
2
ITR04833
2
VBE (sat) -- IC
25
°
C
Collector Current, IC – mA
VBE (sat) -- IC
2SA1830
IC / IB=10
2SC4734
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
7
5
Ta=75
°C
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
--1.0
1.0
7
5
25
°C
Ta=--25
°C
75
°
C
--25
°C
3
2
3
2
--0.1
7
5
3
5
7 --10
2
3
5
7 --100
2
3
5
7--1000
2
ITR04835
0.1
7
5
3
5
7 10
2
3
5
7 100
2
3
5
7 1000
2
Collector Current, IC – mA
100
Collector Current, IC – mA
2
ITR04836
f T -- IC
Gain-Bandwidth Product, fT – MHz
2SA1830
VCE=--10V
f T -- IC
2SC4734
VCE=10V
Gain-Bandwidth Product, fT – MHz
7
5
100
7
5
3
2
3
2
10
7
5
3
5
7
--10
2
3
5
7 --100
2
3
5
7
10
7
5
3
5
7
10
2
3
5
7
100
2
3
5
7
Collector Current, IC – mA
ITR04837
Collector Current, IC – mA
ITR04838
No.4409–3/5
2SA1830/2SC4734
3
2
Cob -- VCB
2SA1830
f=1MHz
100
7
Cob -- VCB
2SC4734
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04839
5
100
7
5
3
2
3
2
10
7
5
10
7
5
3
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB --
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
Collector-to-Base Voltage, VCB --
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
7 100
2
V
ITR04840
SW Time -- IC
2SA1830
SW Time -- IC
2SC4734
Switching Time, SW Time --
μs
ts
tg
Switching Time, SW Time --
μs
ts
tg
tf
tf
to
n
VCC=--150V
10IB1=--10IB2=IC
7 --10
2
3
5
7 --100
2
3
5
7 --1000
2
3
to
n
VCC=--150V
10IB1=--10IB2=IC
5
7 10
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC – mA
5
3
2
ITR04841
5
3
2
Collector Current, IC – mA
ITR04842
ASO
ICP=–4000mA
IC=–2000mA
2SA1830
ASO
ICP=4000mA
IC=2000mA
2SC4734
s
1m
1m
10
ms
10
ms
s
Collector Current, IC – mA
DC
Collector Current, IC – mA
--1000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
7
5
--100
7
5
3
2
--10
7
5
op
er
ati
on
DC
op
er
ati
on
Ta=25°C
2 3
5 7 --10
2 3
5 7--100 2 3 5 7
ITR04843
Ta=25°C
2 3
5 7 10
2 3
5 7 100
2 3
5 7
3
Single pulse
2
--0.1 2 3 5 7--1.0
3
Single pulse
2
0.1 2 3 5 7 1.0
Collector-to-Emitter Voltage, VCE – V
1.6
1.4
PC -- Ta
Collector-to-Emitter Voltage, VCE – V
ITR04844
2SA1830 / 2SC4734
Collector Dissipation, P
C
– W
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04845
No.4409–4/5
2SA1830/2SC4734
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2003. Specifications and information herein are subject to
change without notice.
PS No.4409–5/5
嵌入式系统
