2SC4908
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4908
900
800
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC4908
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
40
typ
V
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.35
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
0m
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n Vo l ta g e V
C E (s at)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t a ge V
B E (s at)
( V)
2
I
C
/I
B
= 5 Co ns t ,
I
C
– V
B E
Temperature Characteristics
(Typical)
3
( V
CE
=4 V )
3
50
40 0m A
300m A
C o l l e c to r C u r r e n t I
C
( A)
200m A
C ol l e c t o r C ur r ent I
C
( A)
2
140m A
2
V
BE
( s a t)
1
1
I
B
=20mA
V
C E
( s at )
0
0.03 0.05
0. 1
0. 5
1
5
0
0
0.2
0.4
0.6
0. 8
1.0
1 .2
0
0
1
2
3
4
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
Co l l ec to r C ur r en t I
C
( A)
B as e- Em i t t or V o l t a g e V
BE
( V )
(V
C E
= 4 V )
50
12 5˚ C
D C C u r r e n t Ga i n h
F E
2 5˚ C
–3 0˚ C
10
S w i t c hi n g T i m e
t
on•
t
s tg•
t
f
(
µ
s )
5
t
s tg
V
CC
2 5 0 V
I
C
: I
B1
: I
B2
=2 :0 . 3: –1
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
4
θ
j - a
– t Characteristics
1
t
f
0 .5
t
on
0 .2
0.1
0 .5
1
3
1
5
0.5
0.3
2
0.02
0.05
0. 1
0.5
1
3
1
10
Time t(ms)
125˚
C (C
60mA
ase
Tem
1
p)
25˚C (C
ase Te
mp)
–30˚C (C
ase Tem
p)
100
1 0 00
C ol l e ct or Cu rre nt I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
10
10
Reverse Bias Safe Operating Area
35
Pc – Ta Derating
10
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
5
0
µ
5
30
W
ith
Co llec to r C u r r e n t I
C
( A )
s
Co lle cto r C u r r e n t I
C
( A )
In
fin
ite
20
he
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
at
si
nk
0.5
Without Heatsink
Natural Cooling
0 .5
10
W i t h o u t H e a ts i n k
0.1
50
1 00
50 0
1000
0 .1
50
10 0
5 00
10 00
2
0
0
25
50
75
100
12 5
1 50
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
121
嵌入式系统