Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
厂商名称:ROHM(罗姆半导体)
器件标准:
下载文档型号 | 2SC5060TV6 | 2SC5060TV4 | 2SC5060TV3 |
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描述 | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, |
是否无铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 |
Reach Compliance Code | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 2 A | 2 A | 2 A |
集电极-发射极最大电压 | 80 V | 80 V | 80 V |
配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE) | 1000 | 1000 | 1000 |
JESD-30 代码 | R-PSIP-T3 | R-PSIP-T2 | R-PSIP-T3 |
JESD-609代码 | e1 | e1 | e1 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE |
峰值回流温度(摄氏度) | 260 | 260 | 260 |
极性/信道类型 | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子面层 | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 10 | 10 | 10 |
晶体管元件材料 | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 |