DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5753
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• P
O (1 dB)
= 18.0 dBm TYP. @ V
CE
= 2.8 V, f = 1.8 GHz, P
in
= 7 dBm
• HFT3 technology (f
T
= 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
2SC5753
2SC5753-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9.0
6.0
2.0
100
205
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
Printed in Japan
©
2001
2SC5753
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R
th j-a
Note
Value
600
Unit
°C/W
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Linear Gain
Gain 1 dB Compression Output Power
Collector Efficiency
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 30 mA
−
−
75
−
−
120
100
100
150
nA
nA
−
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
=
−5
dBm
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
V
CE
= 2.8 V, I
Cq
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
−
8.0
−
−
−
−
−
−
12.0
10.5
1.7
0.42
13.5
13.0
18.0
55
−
−
2.5
0.7
−
−
−
−
GHz
dB
dB
pF
dB
dB
dBm
%
MAG
Note 3
G
L
P
O (1 dB)
η
C
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MAG =
S
21
(K –
√
(K
2
– 1) )
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
R55
75 to 150
2
Data Sheet P15659EJ1V0DS
2SC5753
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
50
205
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
f = 1 MHz
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 3 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90
700
µ
A
600
µ
A
500
µ
A
400
µ
A
300
µ
A
200
µ
A
Collector Current I
C
(mA)
80
70
60
50
40
30
20
10
I
B
= 100
µ
A
2
4
6
8
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Data Sheet P15659EJ1V0DS
3
2SC5753
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
MSG
25
20
15
10
5
0
0.1
1
Frequency f (GHz)
10
|S
21e
|
2
MAG
V
CE
= 3 V
I
C
= 30 mA
15
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
10
5
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
V
CE
= 3 V
f = 1 GHz
20
MSG
MAG
25
V
CE
= 3 V
f = 2 GHz
20
MSG
15
|S
21e
|
2
15
MAG
10
10
|S
21e
|
2
5
5
0
1
10
Collector Current I
C
(mA)
100
0
1
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
| (dB)
Maximum Available Power Gain MAG (dB)
25
V
CE
= 3 V
f = 2.5 GHz
20
2
15
MAG
10
|S
21e
|
2
5
0
1
10
Collector Current I
C
(mA)
100
4
Data Sheet P15659EJ1V0DS
2SC5753
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
25
V
CE
= 3.2 V
f = 0.9 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
G
P
20
15
150
10
100
I
C
5
0
–10
η
C
50
0
15
–5
0
5
10
Input Power P
in
(dBm)
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
25
20
V
CE
= 2.8 V
f = 1.8 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
25
200
20
V
CE
= 3.2 V
f = 1.8 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
15
G
P
10
150
15
G
P
150
100
10
100
η
C
5
I
C
0
–5
0
5
10
15
0
20
50
η
C
5
I
C
0
–5
0
5
10
15
0
20
50
Input Power P
in
(dBm)
Input Power P
in
(dBm)
25
20
V
CE
= 3.2 V
f = 2.4 GHz
I
Cq
= 10 mA (RF OFF)
250
P
out
200
15
G
P
10
150
100
η
C
5
I
C
0
–5
0
5
10
15
0
20
50
Input Power P
in
(dBm)
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Data Sheet P15659EJ1V0DS
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
Output Power P
out
(dBm), Power Gain G
P
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Collector Current I
C
(mA), Collector Efficiency
η
C
(%)
Output Power P
out
(dBm), Power Gain G
P
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
5
