2SC5945
Si NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0443-0300
Rev.3.00
Aug 03, 2006
Features
•
Excellent Linearity
P1dB at output = +26 dBm typ. f = 2.4 GHz
•
High Collector to Emitter Voltage
V
CEO
= 5 V
•
Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
•
7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm).
Outline
RENESAS Package code: PWSN0006JA-A
(Package name: HWSON-6 <TNP-6DTV>)
7
6
5
4
7
6
5
4
1
2
3
1
2
3
1. Collector
2. Collector
3. Collector
4. Emitter
5. Base
6. Emitter
7. Emitter
Note:
Marking is “5945”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Ratings
13
5
1.5
500
1
Note
150
–55 to +150
Unit
V
V
V
mA
W
°C
°C
Rev.3.00 Aug 03, 2006 page 1 of 35
2SC5945
Electrical Characteristics
(Ta = 25°C)
Item
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Maximum Available Gain
Power Gain
Power Added Efficiency
1dB Compression Point at output
1dB Compression Point at output
Symbol
h
FE
C
re
f
T
MAG
PG
PAE
P1dB
P1dB
Min
110
4
30
Typ
150
1.0
15.5
9
6
40
+24
+26
Max
190
Unit
pF
GHz
dB
dB
%
dBm
dBm
Test Conditions
V
CE
= 3 V, I
C
= 100 mA
V
CB
= 2 V, I
E
= 0, f = 1 MHz,
emitter grounded
V
CE
= 3 V, I
C
= 100 mA,
f = 1 GHz
V
CE
= 3 V, I
C
= 100 mA,
f = 2.4 GHz
V
CE
= 3.3 V, I
Cq
= 100 mA,
f = 2.4 GHz, Pin= +20 dBm
V
CE
= 3.3 V, I
Cq
= 100 mA,
f = 2.4 GHz
V
CE
= 3.3 V, I
Cq
= 250 mA,
f = 2.4 GHz
Main Characteristics
Collector Power Dissipation Curve
Typical Output Characteristics
500
4.0 mA
3.5 mA
3.0 mA
2.5 mA
Collector Power Dissipation Pc* (W)
1.5
Collector Current I
C
(mA)
*(40 x 40 x 1 mm)
Value on PCB
1.0
400
300
2.0 mA
1.5 mA
200
0.5
1.0 mA
I
B
= 0.5 mA
100
0
50
100
150
200
0
1
2
3
4
5
Ambient Temperature T
a
(°C)
Collector to Emitter Voltage V
CE
(V)
Rev.3.00 Aug 03, 2006 page 2 of 35
2SC5945
DC Current Transfer Ratio vs.
Collector Current
200
Typical Transfer Characteristics
500
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
V
CE
= 3 V
400
V
CE
= 3 V
150
300
100
200
100
50
0
0.2
0.4
0.6
0.8
1.0
0
1
10
100
1000
Base to Emitter Voltage V
BE
(V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance C
re
(pF)
1.5
20
Collector Current I
C
(mA)
Transition Frequency vs.
Collector Current
Transition Frequency f
T
(GHz)
V
CE
= 3 V
f = 1 GHz
15
I
E
= 0
f = 1 MHz
1.0
10
0.5
5
0
1
2
3
4
5
0
1
10
100
1000
Collector to Base Voltage V
CB
(V)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
Maximum Stable Gain MSG (dB)
Maximum Available Gain MAG (dB)
30
25
20
1.0 GHz
15
1.8 GHz
10
2.4 GHz
5
0
1
10
100
1000
0
0.1
V
CE
= 3 V
MAG
MSG
Collector Current I
C
(mA)
S
21
Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
40
V
CE
= 3 V
I
C
= 100 mA
30
f = 0.5 GHz
Gain G (dB)
MSG
20
MAG
10
|S
21
|
2
1
10
Collector Current I
C
(mA)
Frequency f (GHz)
Rev.3.00 Aug 03, 2006 page 3 of 35
2SC5945
Pin-Pout Characteristics
* 1
µF
V
BB
: Bias Adjustment
+
-
0.22 nF 1000 pF
1000 pF 0.22 nF
+ * 1
µF
-
V
CC
= +3.3 V
100 pF // 15 pF
22
Ω
4.7 nH
15 pF
10 nH
100 pF // 15 pF
OUT
22 nH 0.75 pF
IN
0.75 pF
1.0 nH
0.5 pF
1 pF
Output Power, Power Added Efficiency
vs. Input Power
Output Power, Power Added Efficiency
vs. Input Power
Power Added Efficiency PAE (%)
25
Output Power Pout (dBm)
Output Power Pout (dBm)
Vcc = 3.3 V
f = 2.4 GHz
Icq = 100 mA
Pout
80
25
Vcc = 3.3 V
f = 2.4 GHz
Icq = 250 mA
Pout
80
PAE
20
PAE
60
20
60
15
40
15
40
10
20
10
20
5
0
5
10
15
20
25
0
30
5
0
5
10
15
20
25
0
30
Input Power Pin (dBm)
Input Power Pin (dBm)
Power Gain vs. Input Power
20
Vcc = 3.3 V
f = 2.4 GHz
Icq = 100 mA
Power Gain vs. Input Power
20
Vcc = 3.3 V
f = 2.4 GHz
Icq = 250 mA
Power Gain PG (dB)
15
Power Gain PG (dB)
15
10
10
5
5
0
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
Rev.3.00 Aug 03, 2006 page 4 of 35
Power Added Efficiency PAE (%)
30
100
30
100
2SC5945
S
11
Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1
1.5 2
3 45
10
-10
-.2
-3
-.4
-.6
-.8
-1.5
-2
-120°
-90°
-60°
-1
-5
-4
180°
0°
150°
30°
1
1.5
2
S
21
Parameter vs. Frequency
Scale: 3 / div.
90°
120°
60°
-150°
-30°
Condition: V
CE
= 3 V, Z
O
= 50
Ω
400 to 3000 MHz (100 MHz Step)
(I
C
= 100 mA)
(I
C
= 250 mA)
S
12
Parameter vs. Frequency
Scale: 0.03 / div.
90°
120°
60°
Condition: V
CE
= 3 V, Z
O
= 50
Ω
400 to 3000 MHz (100 MHz Step)
(I
C
= 100 mA)
(I
C
= 250 mA)
S
22
Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1
1.5 2
3 45
10
-10
-.2
-150°
-30°
-3
-.4
-120°
-90°
-60°
-.6
-.8
-1.5
-2
-1
-5
-4
Condition: V
CE
= 3 V, Z
O
= 50
Ω
400 to 3000 MHz (100 MHz Step)
(I
C
= 100 mA)
(I
C
= 250 mA)
Condition: V
CE
= 3 V, Z
O
= 50
Ω
400 to 3000 MHz (100 MHz Step)
(I
C
= 100 mA)
(I
C
= 250 mA)
Rev.3.00 Aug 03, 2006 page 5 of 35
