2SC5975
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
REJ03G0381-0100Z
Rev.1.00
Jul.06.2004
Features
•
High gain bandwidth product
f
T
= 20 GHz typ.
•
High power gain and low noise figure;
PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz
Outline
MFPAK-4
3
2
2
WU-
4
1
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Note:
Marking is “WU-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Emitter to base voltage
V
EBO
Collector current
I
C
Collector power dissipation
Pc
*1
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Ratings
12
4
1.5
35
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Rev.1.00, Jul.06.2004, page 1 of 17
2SC5975
Electrical Characteristics
(Ta = 25°C)
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Symbol
I
CBO
I
CEO
I
EEO
h
FE
C
ob
f
T
PG
NF
Min
—
—
—
70
—
17
13
—
Typ
—
—
—
110
0.3
20
17.5
1.15
Max
1
1
10
150
0.6
—
—
1.7
Unit
µA
µA
µA
—
pF
GHz
dB
dB
Test Conditions
V
CB
= 12 V, I
E
= 0
V
CE
= 4 V, R
BE
=
∞
V
EB
= 1.5 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 2 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 30 mA, f = 1.8 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 1.8 GHz
Rev.1.00, Jul.06.2004, page 2 of 17
2SC5975
Main Characteristics
Collector Power Dissipation Curve
P
C
(mW)
200
I
C
(mA)
20
Value on PCB
(FR-4 : 40 x 40 x 1.6 mm
Double side)
18
16
14
12
10
8
6
4
2
0
0
50
100
150
Ta (°C)
200
Ambient Temperature
Typical Output Characteristics
200
µA
180
µA
160
µA
140
µA
120
µA
100
µA
80
µA
60
µA
40
µA
IB = 20
µA
150
Collector Power Dissipation
100
50
0
Collector Current
0 0.5 1 1.5 2 2.5 3 3.5 4
Collector to Emitter Voltage V
CE
(V)
Collector Output Capacitance vs.
Collector to Base Voltage
I
E
= 0
f = 1 MHz
0.4
h
FE
180
160
140
120
100
80
60
40
20
0
1
10
Collector Current
100
I
C
(mA)
V
CE
= 1 V
2V
3V
Collector Output Capacitance C
ob
(pF)
200
DC Current Transfer Ratio vs.
Collector Current
0.5
DC Current Transfer Ratio
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage V
CB
(V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Emitter grounding
f = 1 MHz
Emitter Input Capacitance C
ib
(pF)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 0
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
1
Emitter Input Capacitance vs.
Emitter to Base Voltage
0.3
0.25
0.2
0.15
0.1
0.05
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Emitter to Base Voltage V
EB
(V)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector to Base Voltage V
CB
(V)
Rev.1.00, Jul.06.2004, page 3 of 17
2SC5975
Gain Bandwidth Product vs. Collector Current
25
f = 2 GHz
20
15
10
V
CE
= 1 V
5
0
1
10
Collector Current
100
I
C
(mA)
3V
S
21
Parameter vs. Collector Current
25
f = 2 GHz
3V
2V
Gain Bandwidth Product f
T
(GHz)
|S
21
|
2
(dB)
S
21
Parameter
20
15
10
2V
V
CE
= 1 V
5
0
1
10
Collector Current
100
I
C
(mA)
5
4
Noise Figure vs. Collector Current
V
CE
= 1 V
20
18
16
14
12
10
8
6
4
2
Power Gain vs. Collector Current
f = 1.8 GHz
3V
NF (dB)
f = 1.8 GHz
PG (dB)
2V
3
3V
Noise Figure
2
2V
1
0
1
10
Collector Current
100
I
C
(mA)
Power Gain
V
CE
= 1 V
0
1
10
Collector Current
100
I
C
(mA)
MSG
•
MAG vs. Collector Current
30
f = 2 GHz
25
3V
Typical Transfer Characteristics
50
45
I
C
(mA)
40
35
30
25
20
15
10
5
0
V
CE
= 2 V
MSG
•
MAG (dB)
20
15
10
5
0
1
10
Collector Current
MSG
MAG
2V
V
CE
= 1 V
100
I
C
(mA)
Collector Current
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Emitter to Base Voltage V
EB
(V)
Rev.1.00, Jul.06.2004, page 4 of 17
2SC5975
S
11
Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1
1.5 2
3 45
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8
–1
–1.5
1
1.5
2
S
21
Parameter vs. Frequency
Scale: 10 / div.
50
40
30
20
10
Condition: VCE = 1 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
Condition: VCE = 1 V , Zo = 50
Ω
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
S
12
Parameter vs. Frequency
0.5
0.4
S
22
Parameter vs. Frequency
.8
.6
.4
1
1.5
2
3
.2
4
5
10
0
.2
.4
.6 .8 1
1.5 2
3 45
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8
–1
–1.5
Scale: 0.1 / div.
0.3
0.2
0.1
Condition: VCE = 1 V , Zo = 50
Ω
100 to 5100 MHz (100 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
Condition: VCE = 1 V , Zo = 50
Ω
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
Rev.1.00, Jul.06.2004, page 5 of 17
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