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2SCR372P5T100R

Bipolar Transistors - BJT NPN 120V Vceo 700mA Ic MPT3

器件类别:分立半导体    晶体管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件:2SCR372P5T100R

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ROHM(罗姆半导体)
包装说明
SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
13 weeks
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.7 A
集电极-发射极最大电压
120 V
配置
SINGLE
最小直流电流增益 (hFE)
180
JESD-30 代码
R-PSSO-F3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
表面贴装
YES
端子面层
Tin (Sn)
端子形式
FLAT
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
220 MHz
文档预览
2SCR372P5
Middle Power Transistor(120V/700mA)
Datasheet
l
Outline
Parameter
Value
 
SOT-89
 
SC-62
 
 
V
CEO
I
C
120V
0.7A
MPT3
 
 
 
l
Features
l
Inner circuit
Low saturation voltage
 
V
CE(sat)
=300mV(Max.)
 
(I
C
/I
B
=500mA/50mA)
l
Application
LOW FREQUENCY AMPLIFIER
l
Packaging specifications
Part No.
Package
SOT-89
(MPT3)
Package
size
4540
Taping
code
T100
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
12
1000
Marking
2SCR372P5
GX
                                                                                         
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© 2016 ROHM Co., Ltd. All rights reserved.
1/6
20160526 - Rev.002
2SCR372P5
          
        
Datasheet
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
l
Electrical characteristics
(T
a
= 25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP*1
P
D*2
P
D*3
T
j
T
stg
Values
120
120
6
0.7
1.4
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Conditions
I
C
= 100μA
I
C
= 1mA
I
E
= 100μA
V
CB
= 100V
V
EB
= 4V
Values
Min.
120
120
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
100
-
220
8
Max.
-
-
-
1.0
1.0
300
390
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
DC current gain
Transition frequency
Output capacitance
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
h
FE
V
CE
= 5V, I
C
= 100mA
f
T
C
ob
V
CE
= 5V, I
E
= -300mA,
f = 100MHz
V
CB
= 10V, I
E
= 0A,
f = 1MHz
hFE values are calssified as follows :
rank
h
FE
Q
120-270
R
180-390
-
-
-
-
-
-
*1 Pw=10ms, Single pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
                                            
 
                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/6
20160526 - Rev.002
2SCR372P5
l
Electrical characteristic curves(T
a
= 25°C)
   
Datasheet
Fig.1 Ground Emitter Propagation
    
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain
    
vs. Collector Current (I)
Fig.4 DC Current Gain
    
vs. Collector Current (II)
                                                                                           
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20160526 - Rev.002
2SCR372P5
l
Electrical characteristic curves(T
a
= 25°C)
   
Datasheet
Fig.5 Collector-Emitter Saturation
    
Voltage vs. Collector Current (I)
Fig.6 Collector-Emitter Saturation
    
Voltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
    
vs. Collector Current
Fig.8 Gain Bandwidth Product
    
vs. Emitter Current
                                                                                           
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/6
20160526 - Rev.002
2SCR372P5
l
Electrical characteristic curves(T
a
= 25°C)
   
Datasheet
Fig.9 Emitter input capacitance
   
vs. Emitter-Base Voltage
   
Collector output capacitance
   
vs. Collector-Base Voltage
Fig.10 Safe Operating Area
                                                                                           
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© 2016 ROHM Co., Ltd. All rights reserved.
5/6
20160526 - Rev.002
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参数对比
与2SCR372P5T100R相近的元器件有:2SCR372P5T100Q。描述及对比如下:
型号 2SCR372P5T100R 2SCR372P5T100Q
描述 Bipolar Transistors - BJT NPN 120V Vceo 700mA Ic MPT3 Bipolar Transistors - BJT NPN 120V Vceo 700mA Ic MPT3
是否Rohs认证 符合 符合
厂商名称 ROHM(罗姆半导体) ROHM(罗姆半导体)
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 13 weeks 13 weeks
外壳连接 COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.7 A 0.7 A
集电极-发射极最大电压 120 V 120 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 180 120
JESD-30 代码 R-PSSO-F3 R-PSSO-F3
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
表面贴装 YES YES
端子面层 Tin (Sn) Tin (Sn)
端子形式 FLAT FLAT
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 220 MHz 220 MHz
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