This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1280
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
4.5
±0.1
Unit: mm
1.6
±0.2
1.5
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
•
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
1
0.4
±0.08
1.5
±0.1
3˚
■
Features
4.0
+0.25
–0.20
2.5
±0.1
3˚
1.0
+0.1
–0.2
3
2
0.5
±0.08
0.4
±0.04
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
on
Parameter
tin
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CEO
V
EBO
I
CBO
h
FE2
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
an
Collector-base cutoff current (Emitter open)
Ma
int
en
Forward current transfer ratio
h
FE1 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 210
S
180 to 280
d
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ct
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cy
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.
45˚
Rating
20
20
5
1
2
1
Unit
V
V
V
A
A
3.0
±0.15
1 : Base
2 : Collector
3 : Emitter
MiniP3-F1 Package
Marking Symbol: R
W
150
°C
−55
to
+150
°C
ue
Conditions
Min
20
5
Typ
Max
Unit
V
/D
isc
I
C
=
1 mA, I
B
=
0
ce
I
E
=
10
µA,
I
C
=
0
V
V
CB
=
10 V, I
E
=
0
1
µA
V
V
V
CE
= 2 V, I
C
= 0.5 A
I
C
=
1 A, I
B
=
50 mA
90
280
V
CE
= 2 V, I
C
= 1.5 A
50
0.5
1.2
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
6 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
6 V, I
E
=
0, f
=
1 MHz
150
18
MHz
pF
0.4 max.
2.6
±0.1
Publication date: December 2002
SJC00214CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1280
P
C
T
a
1.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
1.2
I
C
V
CE
T
a
=
25°C
1.2
I
C
V
CE(sat)
T
a
=
25°C
I
C
/ I
B
=
10
20
Collector power dissipation P
C
(W)
1.0
1.0
1.0
I
B
=
5.0 mA
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
Collector current I
C
(A)
0.8
0.8
Collector current I
C
(A)
0.8
0.6
0.6
0.6
0
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
I
C
I
B
1.0
Collector current I
C
(A)
10
Base-emitter saturation voltage V
BE(sat)
(V)
V
CE
=
2 V
T
a
=
25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
1.2
0.8
0.6
0.4
0.2
0
/D
h
FE
I
C
isc
on
tin
Base current I
B
(mA)
ue
0
2
4
6
8
10
12
an
V
CE
=
2 V
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
500
Ma
int
en
175
150
125
100
75
50
25
V
CB
=
6 V
T
a
=
25°C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
600
400
300
T
a
=
75°C
25°C
−25°C
200
100
0
0.01
0.1
1
10
Collector current I
C
(A)
2
d
pla inc
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ct
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cy
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.
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.1
0.2
0.3
0.4
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.4
0.4
0.4
0.2
0.2
0.2
0.5
Collector-emitter voltage V
CE
(V)
Collector-emitter saturation voltage V
CE(sat)
(V)
V
CE(sat)
I
C
V
BE(sat)
I
C
100
I
C
/ I
B
=
20
100
I
C
/ I
B
=
10
10
25°C
1
1
T
a
= −25°C
T
a
=
75°C
75°C
25°C
0.1
−25°C
0.1
0.01
0.01
0.1
1
10
0.01
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
C
ob
V
CB
ce
200
50
I
E
=
0
f
=
1 MHz
T
a
=
25°C
40
30
20
10
0
−1
0
−10
−100
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
SJC00214CED
I
CBO
(T
a
)
I
CBO
(T
a
=
25°C)
10
3
10
4
10
2
10
1
0
20
40
I
CBO
T
a
60
Ambient temperature T
a
(
°C
)
Ma
int
en
80 100 120 140 160
an
ce
/D
10
2
V
CB
=
10 V
isc
on
10
tin
I
CEO
(T
a
)
I
CEO
(T
a
=
25°C)
10
3
10
4
10
5
1
0
ue
20
40
60
This product complies with the RoHS Directive (EU 2002/95/EC).
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
CEO
T
a
Ambient temperature T
a
(
°C
)
V
CE
=
18 V
80 100 120 140 160
SJC00214CED
Collector current I
C
(A)
0.01
0.1
10
1
0.001
0.1
I
C
I
CP
Safe operation area
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ct
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cy
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.jp rm
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/ ion
.
1
10
DC
t
=
1s
Single pulse
T
a
=
25°C
t
=
10 ms
Collector-emitter voltage V
CE
(V)
100
2SD1280
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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cy
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Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
