首页 > 器件类别 > 分立半导体 > 晶体管

2SD1457AP

Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3

器件类别:分立半导体    晶体管   

厂商名称:Panasonic(松下)

厂商官网:http://www.panasonic.co.jp/semicon/e-index.html

下载文档
器件参数
参数名称
属性值
零件包装代码
TO-3-3L
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
ISOLATED
最大集电极电流 (IC)
6 A
集电极-发射极最大电压
200 V
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)
2000
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
3 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
15 MHz
Base Number Matches
1
参数对比
与2SD1457AP相近的元器件有:2SD1457AO、2SD1457P、2SD1457Q、2SD1457O、2SD1457AQ。描述及对比如下:
型号 2SD1457AP 2SD1457AO 2SD1457P 2SD1457Q 2SD1457O 2SD1457AQ
描述 Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3 Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3 Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3 Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3 Power Bipolar Transistor, 6A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3 Power Bipolar Transistor, 6A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, FULL PACK-3
零件包装代码 TO-3-3L TO-3-3L TO-3-3L TO-3-3L TO-3-3L TO-3-3L
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 6 A 6 A 6 A 6 A 6 A 6 A
集电极-发射极最大电压 200 V 200 V 150 V 150 V 150 V 200 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 2000 4000 2000 700 4000 700
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 3 W 3 W 3 W 3 W 3 W 3 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1 1 1 1
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消