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2SD1559

Silicon NPN Triple Diffused

器件类别:分立半导体    晶体管   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
零件包装代码
TO-3P
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
20 A
集电极-发射极最大电压
100 V
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)
1000
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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contained therein.
2SD1559
Silicon NPN Triple Diffused
ADE-208-914 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
3 kΩ
(Typ)
400
(Typ)
3
2
3
2SD1559
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
B
P
C
*
1
Tj
Tstg
Ratings
100
100
7
20
30
3
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
100
100
100
7
1000
Typ
1.0
9.0
3.0
Max
100
1.0
20000
2.0
2.5
3.0
3.5
V
V
V
V
µs
µs
µs
I
C
= 10 A, I
B1
= –I
B2
= 20 mA
I
C
= 20 A, I
B
= 200 mA*
1
Unit
V
V
V
V
µA
mA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 25 mA, R
BE
=
I
C
= 200 mA, R
BE
=
∞*
1
V
EB
= 50 mA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 80 V, R
BE
=
V
CE
= 3 V, I
C
= 10 A*
1
I
C
= 10 A, I
B
= 20 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturatiopn
voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
1. Pulse test.
h
FE
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
t
on
t
stg
t
f
2
2SD1559
Maximum Collector Dissipation Curve
120
Collector power dissipation Pc (W)
30
Collector current I
C
(A)
10
i
C (peak)
I
C (max)
Area of Safe Operation
10
µs
100
µs
V
CE
= 3 V
Pulse
1.0
3
10
Collector current I
C
(A)
30
PW
=1
PW
80
ms
=1
DC
3
1
0.3
0.1
0m
s
(T
C
=2
40
)
5
°
C
Ta = 25°C
1 shot pulse
1
3
10
30
100
300
Collector to emitter voltage V
CE
(V)
0
50
100
Case temperature T
C
(°C)
150
Typical Output Characteristics
20
3.5
Collector current I
C
(A)
16
DC Current Transfer Ratio
vs. Collector Current
30,000
DC current transfer ratio h
FE
4
3
2.5
2
10,000
T
C
=7
5
°
C
1.5
12
1
8
I
B
= 0.5 mA
4
T
C
= 25°C
3,000
1,000
300
100
30
0.3
–25
°
C
25°C
0
1
2
3
4
Collector to emitter voltage V
CE
(V)
5
3
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