DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
FEATURES
• High DC current gain due to Darlington connection
• Low collector saturation
• Reverse deterrence type
• Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
• Mold package that does not require an insulating board or
insulation bushing
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
500
+300,
−10
10
5.0
10
0.5
30
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
(OHFWURGH &RQQHFWLRQ
%DVH
&ROOHFWRU
(PLWWHU
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD1592
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
I
CBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
Conditions
V
CB
= 400 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 2.0 A
V
CE
= 2.0 V, I
C
= 3.0 A
I
C
= 2 A, I
B
= 5 mA
I
C
= 2 A, I
B
= 5 mA
I
C
= 3.0 A, I
B1
=
−I
B2
= 30 mA
R
L
= 50
Ω,
V
CC
≅
150 V
400
100
1.0
1.6
1.0
12
6
1.5
2.0
V
V
MIN.
TYP.
MAX.
10
3,000
Unit
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE
M
400 to 800
L
600 to 1,200
K
1,000 to 3,000
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Collector Current I
C
(A)
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
Case Temperature T
C
(
°
C)
DC Current Gain h
FE
I
C
Derating dT (%)
Collector Current I
C
(A)
2
Data Sheet D16137EJ1V0DS
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2SD1592
3
2SD1592
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
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•
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•
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•
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M8E 00. 4
