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2SD1842P

40A, 100V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
零件包装代码
TO-218
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
2
Reach Compliance Code
unknow
最大集电极电流 (IC)
40 A
集电极-发射极最大电压
100 V
配置
SINGLE
最小直流电流增益 (hFE)
50
JEDEC-95代码
TO-218
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
功耗环境最大值
150 W
最大功率耗散 (Abs)
150 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
VCEsat-Max
0.8 V
Base Number Matches
1
文档预览
Ordering number:EN3261A
2SB1232 : PNP Epitaxial Planar Silicon Transistor
2SD1842 : NPN Triple Diffused Planar Silicon Transistor
2SB1232/2SD1842
100V/40A Switching Applications
Applications
· Motor drivers, relay drivers, converters, and other
general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SB1232/2SD1842]
Features
· Large current capacity and wide ASO.
· Low saturation voltage.
( ) : 2SB1232
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Conditions
Ratings
(–)110
(–)100
(–)6
(–)40
(–)65
(–)12
3.0
Unit
V
V
V
A
A
A
W
W
Tc=25˚C
Tj
Tstg
150
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VCB=(–)100V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)4A
VCE=(–)2V, IC=(–)16A
IC=(–)16A,
IC=(–)16A,
IB=(–)1.6A
IB=(–)1.6A
50*
20
(–)0.8
(–)1.5
V
V
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
140*
Unit
mA
mA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/71095TS/7190MH, TA (KOTO) No.3261–1/4
2SB1232/2SD1842
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)5mA, RBE=∞
V(BR)EBO IC=(–)1mA, IC=0
Conditions
Ratings
min
(–)110
(–)100
(–)6
typ
max
Unit
V
V
V
* : For the h
FE
1 of the 2SB1232/2SD1842, specify at least two ranks in principle.
50
P
100
70
Q
140
No.3261–2/4
2SB1232/2SD1842
No.3261–3/4
2SB1232/2SD1842
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any and all SANYO products described or contained herein fall under strategic
products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of
Japan, such products must not be exported without obtaining export license from the Ministry of
International Trade and Industry in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are
subject to change without notice.
PS No.3261–4/4
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参数对比
与2SD1842P相近的元器件有:2SD1842Q、2SB1232P、2SB1232Q。描述及对比如下:
型号 2SD1842P 2SD1842Q 2SB1232P 2SB1232Q
描述 40A, 100V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 40A, 100V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 40A, 100V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 40A, 100V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
零件包装代码 TO-218 TO-218 TO-218 TO-218
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 2 2 2 2
Reach Compliance Code unknow unknown unknow unknow
最大集电极电流 (IC) 40 A 40 A 40 A 40 A
集电极-发射极最大电压 100 V 100 V 100 V 100 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 50 70 50 70
JEDEC-95代码 TO-218 TO-218 TO-218 TO-218
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 NPN NPN PNP PNP
功耗环境最大值 150 W 150 W 150 W 150 W
最大功率耗散 (Abs) 150 W 150 W 150 W 150 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
VCEsat-Max 0.8 V 0.8 V 0.8 V 0.8 V
Base Number Matches 1 - 1 1
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