2SD2102
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
1. Base
2. Collector
3. Emitter
2.6 kΩ
(Typ)
3
12
3
2SD2102
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
1
Rating
60
60
7
4
8
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
60
60
7
—
—
1000
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
10
10
20000
1.5
3.0
2.0
3.5
V
V
Unit
V
V
V
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 25 mA, R
BE
=
∞
I
E
= 50 mA, I
C
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 2 A*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note:
1. Pulse test.
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
C
= 2 A, I
B
= 4 mA*
I
C
= 2 A, I
B
= 4 mA*
1
I
C
= 4 A, I
B
= 40 mA*
1
1
I
C
= 4 A, I
B
= 40 mA*
1
See switching characteristic curve of 2SD1558.
2
2SD2102
Maximum Collector Dissipation Curve
30
Collector power dissipation P
C
(W)
20
10
0
50
100
Case temperature T
C
(°C)
Area of Safe Operation
150
30
Collector current I
C
(A)
10
3
1.0
0.3
0.1
Ta = 25°C
1 shot pulse
i
C(peak)
I
C(max)
0.03
0.3
1.0
3
10
30
100 300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
5
T
C
= 25°C
.5
.0
5
5.0
4
4
3.
3.0 .5
2
2
1.5
s
1
µ
s
)
s
1m
s
5
°
C
0
µ
0m
=2
10
=1
(T
C
tion
era
Op
PW
DC
Collector current I
C
(A)
4
3
1.0
2
0.5 mA
1
I
B
= 0
0
2
1
3
4
5
Collector to emitter voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
10,000
DC current transfer ratio h
FE
5,000
2,000
1,000
500
200
100
0.5 1.0 2
5
0.1 0.2
Collector current I
C
(A)
V
CE
= 3 V
T
C
=
°
C
75
C
°
25
C
5
°
–2
10
3
2SD2102
Saturation Voltage vs.
Collector Current
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
10
5
200
2
1.0
0.5
0.2
0.1
0.1
V
CE(sat)
V
BE(sat)
500
I
C
/I
B
= 200
0.2
0.5 1.0
2
5
Collector current I
C
(A)
10
Transient Thermal Resistance
Thermal resistance
θ
j-c
(°C/W)
10
3
T
C
= 25°C
1.0
0.3
0.1
1m
10m
100m
1.0
10
100
1000
Time t (s)
4
2SD2102
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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5
微控制器 MCU
