High gain amplifier transistor (25V, 2A)
2SD2153
Features
1) Low saturation voltage,
typically V
CE(sat)
= 0.12V at I
C
= I
B
= 1A / 20mA
2) Excellent DC current gain characteristics.
Dimensions
(Unit : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
1.6
3.0
0.5
(3)
4.5
(2)
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
+
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
25
6
2
3
0.5
2
150
−55
to
+150
∗2
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
∗1
∗1
Single pulse, Pw=10ms
∗2
Mounted on a 40 40
t
0.7mm Ceramic substrate
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
2SD2153
MPT3
UVW
DN
T100
1000
∗
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
25
6
−
−
−
820
−
−
Typ.
−
−
−
−
−
0.12
−
110
22
Max.
−
−
−
0.5
0.5
0.5
1800
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
I
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
1A/20mA
V
CE
/I
C
=
6V/0.5A
V
CE
=
10V , I
E
= −10mA
, f= 100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
0.4
∗
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1.5
1/2
2009.12 - Rev.B
2SD2153
Electrical
characteristics curves
2
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
10mA
9mA
8mA
7mA
6mA
5mA
Data Sheet
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
∗
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
10k
5k
V
CE
=6V
Ta=100 C
25 C
−40
C
3mA
DC CURRENT GAIN : h
FE
4mA
2mA
Ta=100 C
25 C
−25
C
2k
1k
500
200
100
50
1
1
B
=1mA
0
0
1
2
0
500m
1
1.5
1m
10m
100m
1
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Ground emitter output
characteristics
Fig.2 Ground emitter propagation
characteristics
Fig.3 DC current gain
1
500m
1
500m
I
C
/I
B
=10
TRANSITION FREQUENCY : f
T
(MHz)
10000
500
200
100
50
20
10
5
2
1
1
2
5
V
CE
=6V
Ta=25 C
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m
5m 10m 20m 50m 100m 200m 500m 1
2
5
I
C
/I
B
=50
40
30
10
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m
∗
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
Ta=100 C
25 C
−25
C
∗
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
5m 10m 20m 50m 100m 200m 500m 1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : I
C
(
A
)
COLLECTOR CURRENT : I
C
(
A
)
EMITTER CURRENT : I
E
(m
A
)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwith product
vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR CURRENT : Ic (A)
Ta=25°C
f=1MHz
Ic=0A
Ta=25°C
f=1MHz
Ic=0A
10
Ic max (Pulse)
1
PW=100ms
PW=10ms
1000
500
200
100
50
20
10
0.1 0.2
0.5 1
2
5
10 20
50 100
1000
500
200
100
50
20
10
0.1 0.2
0.5 1
2
5 10
DC
0.1
0.01
Ta=25°C
Single non repetitive pulse
0.001
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : V
CB
(
V
)
EMITTER TO BASE VOLTAGE : V
EB
(
V
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Fig.9 Safe operating area
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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