To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
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(http://www.renesas.com)
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1.
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DATA SHEET
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output.
This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
ORDERING INFORMATION
Ordering Name
2SD2161
Package
Isolated TO-220
(Isolated TO-220)
FEATURES
• High h
FE
due to Darlington connection
h
FE
≥
2,000 (V
CE
= 2.0 V, I
C
= 2.0 A)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25°C
T
A
= 25°C
PW
≤
300
µ
s,
duty cycle
≤
10%
Conditions
Ratings
100
100
7.0
±5.0
±10
0.5
20
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2161
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Collector cutoff current
DC current gain
Symbol
I
CBO
h
FE1
h
FE2
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 100 V, I
E
= 0 A
V
CE
= 2.0 V, I
C
= 2.0 A
Note
V
CE
= 2.0 V, I
C
= 4.0 A
Note
I
C
= 2.0 A, I
B
= 2.0 mA
Note
I
C
= 2.0 A, I
B
= 2.0 mA
Note
V
CE
= 5.0 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
I
C
= 2.0 A, R
L
= 25
Ω,
I
B1
=
−I
B2
= 2.0 mA, V
CC
≅
50 V
Refer to the test circuit.
30
35
1.0
3.5
1.2
2,000
500
1.5
2.0
V
V
MHz
pF
8,000
MIN.
TYP.
MAX.
1.0
20,000
Unit
µ
A
µ
s
µ
s
µ
s
Note
Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
%DVH FXUUHQW
ZDYHIRUP
&ROOHFWRU FXUUHQW
ZDYHIRUP
2
Data Sheet D14864EJ2V0DS
2SD2161
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
Derating dT (%)
Case Temperature T
C
(°C)
Single pulse
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance r
th(t)
(°C/W)
Without
heatsink
Rth(j – a)
With infinite heatsink
Pulse Width PW (s)
Data Sheet D14864EJ2V0DS
3
