DATA SHEET
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2165 is a single power transistor developed especially
for high h
FE
. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its h
FE
is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≅
1,300 TYP. (V
CE
= 5.0 V, I
C
= 1.0 A)
V
CE(SAT)
≅
0.3 V TYP. (I
C
= 3.0 A, I
B
= 30 mA)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
(T
C
= 25°C)
P
T
(T
A
= 25°C)
T
j
T
stg
Ratings
100
100
7.0
6.0
10
Note
1.0
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
Note
PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13178EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2165
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 60 V, I
E
= 0 A
V
EB
= 7.0 V, I
C
= 0 A
V
CE
= 5.0 V, I
C
= 1.0 A
Note
V
CE
= 5.0 V, I
C
= 3.0 A
Note
I
C
= 3.0 A, I
B
= 30 mA
Note
I
C
= 3.0 A, I
B
= 30 mA
Note
V
CE
= 5.0 V, I
C
= 0.1 A
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
110
50
800
500
1,300
1,000
0.3
0.5
1.2
V
V
MHz
pF
MIN.
TYP.
MAX.
10
10
3,200
Unit
µ
A
µ
A
Note
Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE1
CLASSIFICATION
Marking
h
FE1
M
800 to 1,600
L
1,000 to 2,000
K
1,600 to 3,200
2
Data Sheet D13178EJ2V0DS
2SD2165
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(
°
C)
Derating dT (%)
Case Temperature T
C
(
°
C)
Single pulse
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance r
(t)
(
°
C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D13178EJ2V0DS
3
2SD2165
Pulse test
Collector Current I
C
(A)
DC Current Gain h
FE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Base Saturation Voltage V
BE(sat)
(V)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Gain Bandwidth Product f
T
(MHz)
Collector Current I
C
(A)
Collector Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
4
Data Sheet D13178EJ2V0DS
2SD2165
[MEMO]
Data Sheet D13178EJ2V0DS
5
