Power Transistors
2SD2183
Silicon NPN epitaxial planar type
Unit: mm
3.8
±0.2
For low-frequency output amplification
Complementary to 2SB1439
■
Features
10.8
±0.2
7.5
±0.2
4.5
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.65
±0.1
2.5
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
−55
to
+150
■
Electrical Characteristics
T
a
=
25°C
±
2°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
tin
Collector to base voltage
on
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
an
Forward current transfer ratio
h
FE1 *2
h
FE2 *1
Collector to emitter saturation voltage
*1
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Note) *1: Pulse measurement
*2: h
FE1
rank classification
Rank
h
FE1
R
120 to 240
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
170 to 340
d
pla inc
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1.15
±0.2
0.5
±0.1
2.05
±0.2
0.4
±0.1
•
High collector to emitter voltage V
CEO
•
Low collector to emitter saturation voltage V
CE(sat)
•
Allowing supply with the radial taping
•
Complementary pair with 2SB1439
0.85
±0.1
1.0
±0.1
0.8 C
90˚
0.8 C
16.0
±1.0
0.7
±0.1
0.7
±0.1
1.15
±0.2
Rating
100
100
5
2
3
Unit
V
V
0.8 C
1
2
3
2.5
±0.2
2.5
±0.2
V
A
A
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
1.5
W
150
°C
°C
Conditions
Min
100
Typ
Max
Unit
V
ue
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
100
5
V
isc
V
/D
V
CB
=
50 V, I
E
=
0
0.1
µA
ce
V
CE
=
2 V, I
C
=
0.2 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
1 A, I
B
=
50 mA
I
C
=
1 A, I
B
=
50 mA
120
80
340
Ma
int
en
0.1
0.8
80
0.3
1.2
V
V
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
MHz
pF
42
60
S
Publication date: July 2002
SJD00252AED
1
2SD2183
P
C
T
a
1.6
2.5
T
a
= 25°C
I
C
V
CE
1.2
I
C
V
BE
V
CE
=
2 V
25°C
Collector power dissipation P
C
(W)
1.4
2.0
I
B
=
10 mA
9 mA
1.5
8 mA
7 mA
6 mA
1.0
5 mA
4 mA
3 mA
2 mA
1 mA
1.0
Collector current I
C
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
Collector current I
C
(mA)
0.8
T
a
= 85°C
−25°C
0.6
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
10
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
=
20
1
T
a
= 85°C
0.1
25°C
−25°C
0.01
ue
0.001
0.001
0.01
0.1
1
10
1 000
Collector output capacitance C
ob
(pF)
100
10
0
5
Ma
int
en
10
15
20
an
25
ce
f = 1 MHz
T
a
= 25°C
30
Collector to base voltage V
CB
(V)
2
/D
C
ob
V
CB
isc
35
on
40
tin
Collector current I
C
(A)
d
pla inc
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0
0
2
4
6
8
10
12
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.4
0.5
0.2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
BE(sat)
I
C
h
FE
I
C
10
I
C
/ I
B
=
20
300
V
CE
=
2 V
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
250
T
a
= 85°C
200
25°C
1
25°C
T
a
=
−25°C
150
−25°C
85°C
100
50
0.1
0.001
0.01
0.1
1
10
0
0.001
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
SJD00252AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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cy
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ge
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int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
