Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2251
DESCRIPTION
・With
TO-3PML package
・High
speed
・High
breakdown voltage
・High
reliability
・Built-in
damper diode
APPLICATIONS
・Color
TV horizontal deflection output
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
半
ANG
H
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
INC
SEM
E
Open emitter
Open base
CONDITIONS
ON
IC
OR
DUT
VALUE
1500
800
6
7
20
UNIT
V
V
V
A
A
Open collector
T
C
=25℃
P
C
Collector power dissipation
60
W
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
V
F
t
f
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA; I
B
=0
I
C
=5 A;I
B
=1A
I
C
=5 A;I
B
=1A
V
CB
=800V; I
E
=0
V
CE
=1500V ;R
BE
=0
V
EB
=4V; I
C
=0
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
40
5
8
MIN
800
TYP.
2SD2251
MAX
UNIT
V
5
1.5
10
1.0
130
8
V
V
μA
mA
mA
电半
固
Fall time
Diode forward voltage
导½
I
EC
=7A; I
B
=0
HAN
INC
SEM
GE
I
C
=4A;R
L
=50Ω
I
B1
=0.8A;-I
B2
=1.6A;V
CC
=200V
ON
IC
OR
DUT
2.0
0.1
0.3
V
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2251
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2251
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
4
