To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2403 is a transistor featuring high current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
Conditions
Ratings
80
60
6.0
3.0
5.0
Unit
V
V
V
A
A
Base current (DC)
Base current (pulse)
I
B(DC)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
16 cm
2
×
0.7 mm ceramic board mounted
0.2
0.4
A
A
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
T
stg
2.0
150
−55
to +150
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2403
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
&%2
I
(%2
h
)(
h
)(
V
%(
V
V
V
f
7
C
RE
t
RQ
t
VWJ
t
I
Conditions
V
&%
= 80 V, I
(
= 0
V
(%
= 6.0 V, I
&
= 0
V
&(
= 2.0 V, I
&
= 0.1 A
V
&(
= 2.0 V, I
&
= 1.0 A
V
&(
= 2.0 V, I
&
= 0.1 A
I
&
= 2.0 A, I
%
= 0.1 A
I
&
= 3.0 A, I
%
= 0.15 A
I
&
= 2.0 A, I
%
= 0.1 A
V
&(
= 10 V, I
(
=
−0.3
A
V
&%
= 10 V, I
(
= 0, f = 1 MHz
I
&
= 1.0 A, V
&&
= 10 V
I
%
=
−I
%
= 0.1 A
R
/
= 5.0
Ω
80
100
630
200
670
150
210
0.89
130
30
150
652
40
400
730
300
500
1.2
MIN.
TYP.
MAX.
100
100
Unit
nA
nA
−
−
mV
mV
mV
V
MHz
pF
ns
ns
ns
h
FE
CLASSIFICATION
Marking
h
)(
GX
100 to 200
GY
160 to 320
GZ
200 to 400
2
Data Sheet D16156EJ2V0DS
2SD2403
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Data Sheet D16156EJ2V0DS
3
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