Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD613
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB633
·High
breakdown voltage :V
CEO
=85V
·High
current 6A
APPLICATIONS
·Recommend
for 25-35W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
85
6
6
10
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; R
BE
=∞
I
C
=5mA; I
E
=0
I
E
=5mA; I
C
=0
I
C
=4A;I
B
=0.4 A
I
C
=1A ; V
CE
=5V
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
40
20
15
110
MIN
85
100
6
TYP.
2SD613
MAX
UNIT
V
V
V
2.0
1.5
0.1
0.1
320
V
V
mA
mA
MHz
pF
h
FE-1
classifications
C
40-80
D
60-120
E
100-200
F
160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD613
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
