Transistor
2SD892, 2SD892A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
5.0±0.2
4.0±0.2
q
q
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to
2SD892
(Ta=25˚C)
Ratings
30
60
25
50
5
Unit
V
13.5±0.5
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer hammer: h
FE
= 4000 to 20000.
A shunt resistor is omitted from the driver.
base voltage
Collector to
2SD892A
2SD892
emitter voltage 2SD892A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
Parameter
nt
in
s
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
(Ta=25˚C)
Symbol
I
CBO
I
EBO
ce
2SD892
2SD892A
2SD892
2SD892A
V
CBO
V
CEO
V
EBO
h
FE*1
en
Collector to emitter
Emitter to base voltage
ai
nt
voltage
M
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
*1
h
FE
Rank classification
V
CE(sat)
V
BE(sat)
f
T
Pl
e
Forward current transfer ratio
Rank
h
FE
Q
R
4000 ~ 10000 8000 ~ 20000
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
0.45
–0.1
+0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
5.1±0.2
s
Features
0.45
–0.1
+0.2
1.27
1.27
V
V
A
A
1 2 3
2.3±0.2
2.54±0.15
0.75
0.5
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
400
150
mW
˚C
˚C
Internal Connection
C
–55 ~ +150
B
ue
≈200Ω
E
Conditions
min
typ
max
100
100
Unit
nA
nA
V
co
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
/D
is
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
30
60
25
50
5
an
V
V
I
E
= 100µA, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
4000
20000
2.5
3
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
150
*2
V
V
MHz
Pulse measurement
1
Transistor
P
C
— Ta
Collector to emitter saturation voltage V
CE(sat)
(V)
500
100
30
10
3
25˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
2SD892, 2SD892A
V
CE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=1000
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
Ta=–25˚C
75˚C
V
BE(sat)
— I
C
I
C
/I
B
=1000
Collector power dissipation P
C
(mW)
400
300
200
100
0
0
25
50
75
100
125
150
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
— I
C
10
5
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=10V
8
7
6
5
4
3
2
1
0
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
Ta=75˚C
10
4
25˚C
–25˚C
10
3
10
2
10
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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