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April 1, 2003
Cautions
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2SH27
Silicon N Channel IGBT
High Speed Power Switching
ADE-208-789A(Z)
2nd. Edition
May 1999
Features
•
High speed switching
•
Low on-voltage
Outline
TO–220AB
C
G
1
E
2
3
1. Gate
2. Collector (Flange)
3. Emitter
2SH27
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Channel temperature
Storage temperature
Note:
1. Value at Tc = 25°C
Symbol
V
CES
V
GES
I
C
ic(peak)
P
C Note1
Tj
Tstg
Ratings
600
±20
15
30
50
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector
current
Gate to emitter leak current
Symbol
I
CES
I
GES
Min
—
—
6.0
—
—
—
—
—
—
Typ
—
—
—
2.1
920
150
220
300
410
Max
100
±1
8.0
2.6
—
—
—
600
820
Unit
µA
µA
V
V
pF
ns
ns
ns
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
=
±
20 V, V
CE
= 0
I
C
= 15mA, V
CE
= 10V
I
C
= 15A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0
f = 1MHz
I
C
= 15A
R
L
= 20
Ω
V
GS
=
±15V
Rg = 50
Ω
Gate to emitter cutoff voltage V
GE(off)
Collector to emitter saturation V
CE(sat)
voltage
Input capacitance
Switching time
Cies
t
r
t
on
t
f
t
off
2
2SH27
Main Characteristics
Power vs. Temperature Derating
80
Pch (W)
I
C
(A)
100
30
10
3
PW
Maximum Safe Operation Area
10
60
0
µ
s
1
Channel Dissipation
Collector Current
m
s
40
1
0.3
0.1
0.03
DC
O
=
10
m
s
(1
t
ra
io
n
pe
20
c
(T
=
sh
ot
)
)
°
C
25
0
0.01
50
100
150
200
Case Temperature Tc (°C)
1
Ta = 25
°C
3
10
30
100 300 1000
Collector to Emitter Voltage V
CE
(V)
Reverse Bias SOA
50
I
C
(A)
I
C
(A)
20
10
5
2
1
0.5
0.2
0.1
0
Tc = 25
°C
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
0
Collector Current
20
Typical Output Characteristics
15 V
16
12 V
Pulse Test
11 V
Collector Current
12
10 V
8
4
V
GS
= 9 V
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
3
