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2SJ366-4061

Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3

器件类别:分立半导体    晶体管   

厂商名称:SHINDENGEN

厂商官网:https://www.shindengen.com

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器件参数
参数名称
属性值
包装说明
SMALL OUTLINE, R-PSSO-G2
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
DRAIN
配置
SINGLE
最小漏源击穿电压
60 V
最大漏极电流 (ID)
5 A
最大漏源导通电阻
0.25 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PSSO-G2
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
P-CHANNEL
最大脉冲漏极电流 (IDM)
20 A
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
晶体管元件材料
SILICON
Base Number Matches
1
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参数对比
与2SJ366-4061相近的元器件有:2SJ366-4071、2SJ366-4101、F5E6P-4071、F5E6P-4100、F5E6P-4061、F5E6P-4101。描述及对比如下:
型号 2SJ366-4061 2SJ366-4071 2SJ366-4101 F5E6P-4071 F5E6P-4100 F5E6P-4061 F5E6P-4101
描述 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
针数 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (ID) 5 A 5 A 5 A 5 A 5 A 5 A 5 A
最大漏源导通电阻 0.25 Ω 0.25 Ω 0.25 Ω 0.25 Ω 0.25 Ω 0.25 Ω 0.25 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
最大脉冲漏极电流 (IDM) 20 A 20 A 20 A 20 A 20 A 20 A 20 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 - - - SHINDENGEN SHINDENGEN SHINDENGEN SHINDENGEN
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