Ordering number : ENN6898
2SJ569LS
P-Channel Silicon MOSFET
2SJ569LS
Ultrahigh-Speed Switching Applications
Features
•
•
Package Dimensions
unit : mm
2078B
[2SJ569]
10.0
3.5
7.2
Low ON-resistance.
Ultrahigh-speed switching.
4.5
2.8
3.2
16.1
16.0
0.9
1.2
14.0
3.6
0.75
0.7
1
2 3
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
2.55
2.55
0.6
Ratings
--300
±30
--5
-
-20
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
Conditions
ID=-
-1mA, VGS=0
IG=±100µA, VDS=0
VDS=-
-300V, VGS=0
VGS=±25V, VDS=0
VDS=-
-10V, ID=--1mA
--1.5
Ratings
min
--300
±30
--100
±10
--2.5
typ
max
Unit
V
V
µA
µA
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22201 TS IM TA-2231 No.6898-1/4
2SJ569LS
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Sourse On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=--10V, ID=-
-3A
ID=--3A, VGS=--10V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit
See specified Test Circui
See specified Test Circuit
See specified Test Circuit
IS=--5A, VGS=0
Ratings
min
3
typ
5
0.95
750
170
76
24
37
230
110
--1.0
--1.5
1.25
max
Unit
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
Switching Time Test Circuit
VDD= --100V
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
ID= --3A
RL=33.3Ω
D
VOUT
G
P.G
50Ω
2SJ569LS
S
--10.0V
--8.0V
--5.0
--4.5
--4.0
ID -- VDS
--6.0
V
V
--4.0
--8
ID -- VGS
VDS= --10V
25
°
C
75
°
C
--5
--7
--6
--5
--4
--3
--2
--1
0
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--3.5V
--3.0V
--1.0
--0.5
0
0
--3
--6
--9
--12
--15
--18
--21
--24
--27
--30
Drain Current, ID -- A
0
--1
--2
Tc
=
VGS= --2.5V
75
°
C
--2
5
°
C
25
°
C
--3
--4
Tc= -
-25
°
C
--6
IT01835
Drain-to-Source Voltage, VDS -- V
--2.0
--1.8
IT01834
2.0
1.8
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Tc=25°C
ID= --3A
ID= --3A
VGS= --10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT01836
Case Temperature, Tc --
°C
IT01837
No.6898-2/4
2SJ569LS
10
y
fs -- ID
VDS= --10V
°
C
--25
C
25
°
--10
7
5
IF -- VSD
VGS = 0
Forward Transfer Admittance,
yfs
-- S
7
5
3
2
Forward Current, IF -- A
Tc=
3
2
C
75
°
1.0
7
5
3
2
--1.0
7
5
3
2
0.1
--0.1
--0.1
2
3
5
7
--1.0
2
3
5
10000
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
--10
IT01838
--10
7
0
--0.2
--0.4
Tc=75
°
C
25
°
C
--25
°
C
--0.6
--0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD -- V
IT01839
VGS -- Qg
VDS= --10V
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
10
0
--5
--10
--15
--20
Ciss
Coss
Crss
--25
--30
--35
--40
--45
--50
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
1000
7
IT01840
--100
7
5
3
2
Total Gate Charge, Qg -- nC
IT01841
SW Time -- ID
ASO
IDP= --20A
Switching Time, SW Time -- ns
5
3
2
VDD=100V
VGS=10V
Drain Current, ID -- A
td (of
f)
--10
7
5
3
2
--1.0
7
5
3
2
ID= --5A
10µs
100µs
100
7
5
3
2
tf
DC
tr
td(on)
era
tio
Operation in this
n
area is limited by RDS(on).
op
1ms
10ms
100ms
10
--0.1
2
3
5
7
--1.0
2
3
5
IT01842
--0.1
7
5
3
Ta=25°C
2
--0.01
Single pulse
2 3
5
--1.0
7 --10
2
3
5 7 --100
2
3
5 7 --1000
IT01843
Drain Current, ID -- A
3.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
35
PD -- Tc
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
2.5
30
25
2.0
20
1.5
15
1.0
10
0.5
5
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT01845
Case Temperature, Tc --
°C
IT01844
No.6898-3/4
2SJ569LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.
PS No.6898-4/4
