2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
ADE-208-1245 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
No secondary breakdown
•
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1151
2SK1152
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at T
C
= 25°C
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Symbol
V
DSS
Ratings
450
500
±30
1.5
6
1.5
20
150
–55 to +150
V
A
A
A
W
°C
°C
Unit
V
2
2SK1151(L)(S), 2SK1152(L)(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Symbol Min
2SK1151 V
(BR)DSS
2SK1152
V
(BR)GSS
I
GSS
450
500
±30
—
—
—
—
—
—
±10
100
V
µA
µA
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS(off)
2.0
—
—
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
0.6
—
—
—
—
—
—
—
—
—
—
3.5
4.0
1.1
160
45
5
5
10
20
10
1.0
220
3.0
5.5
6.0
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 1.5 A, V
GS
= 0
I
F
= 1.5 A, V
GS
= 0,
di
F
/dt = 100 A/µs
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
I
D
= 1 A, V
DS
= 20 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
1
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK1151 I
DSS
2SK1152
Gate to source cutoff voltage
Static Drain to source 2SK1151 R
DS(on)
on stateresistance
2SK1152
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
3
2SK1151(L)(S), 2SK1152(L)(S)
Power vs. Temperature Derating
30
Channel Dissipation Pch (W)
10
10
Maximum Safe Operation Area
O
ar per
by ea at
R is ion
DS
lim in
(o
i t
n)
ted his
3
Drain Current I
D
(A)
20
1.0
0.3
0.1
0.03
10
0
D
µ
s
1
µ
s
PW
=
O
pe
r
at
io
n
C
m
s
s
m
10
(1
)
ot
Sh
25
(T
C
10
=
°C
)
2SK1151
Ta = 25°C
2SK1152
0.01
0
50
100
Case Temperature T
C
(°C)
150
1
10
1,000
100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
2.0
Pulse Test
15 V
2.0
5V
6V
10 V
4.5 V
1.2
1.6
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
1.6
Drain Current I
D
(A)
1.2
0.8
4V
0.4
V
GS
= 3.5 V
0
4
8
12
16
Drain to Source Voltage V
DS
(V)
20
0.8
75°C
0.4
T
C
= 25°C
0
2
4
6
8
Gate to Source Voltage V
GS
(V)
10
–25°C
4
2SK1151(L)(S), 2SK1152(L)(S)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
100
50
Pulse Test
V
GS
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
16
12
2A
8
1A
I
D
= 0.5 A
0
4
8
12
16
Gate to Source Voltage V
GS
(V)
20
20
10
5
15 V
4
2
1
0.05
0.1
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
Static Drain to Source on State
Resistance vs. Temperature
Static Drain-Source on State Resistance
R
DS (on)
(Ω)
10
I
D
= 2 A
8
V
GS
= 10 V
Pulse Test
Forward Transfer Admittance
yfs
(S)
5
2
1.0
Forward Transfer Admittance
vs. Drain Current
V
DS
= 20 V
Pulse Test
–25°C
6
1A
0.5 A
T
C
= 25°C
0.5
0.2
0.1
75°C
4
2
0
–40
0
40
80
120
Case Temperature T
C
(°C)
160
0.05
0.1
0.5 1.0
0.2
2
Drain Current I
D
(A)
5
5
