Power F-MOS FETs
2SK1612
Silicon N-Channel Power F-MOS FET
s
Features
q
High avalanche energy capacity
q
V
GSS
: 30V guaranteed
q
Low R
DS(on)
, high-speed switching characteristic
unit: mm
0.7±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
4.2±0.2
s
Applications
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
V
DSS
V
GSS
I
D
I
DP
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
EAS
*
P
D
T
C
= 25°C
Ta = 25°C
Channel temperature
Storage temperature
Single pulse
T
ch
T
stg
*
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Symbol
Drain to Source cut-off current
Gate to Source leakage current
I
DSS
I
GSS
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
V
DSS
V
th
ue
EAS
*
Drain to Source ON-resistance
Forward transfer admittance
R
DS(on)
| Y
fs
|
C
oss
t
on
t
f
t
d(off)
an
Reverse transfer capacitance (Common Source) C
rss
ce
Output capacitance (Common Source)
/D
Input capacitance (Common Source) C
iss
en
Turn-on time
Fall time
*
Turn-off time (delay time)
M
Avalanche energy capacity test circuit
L
I
D
Gate
V
DS
D
rain
S
ource
C
V
DD
PVS
R
GS
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
7.5±0.2
Ratings
800
Unit
V
V
A
A
16.7±0.3
q
High-speed switching (switching power supply)
q
For high-frequency power amplification
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
±30
±3
14.0±0.5
0.5
+0.2
–0.1
0.8±0.1
±6
20
50
2
2.54±0.25
mJ
W
5.08±0.5
2
1
150
°C
°C
−55
to +150
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
3
Conditions
min
typ
max
0.1
±1
Unit
mA
µA
V
V
DS
= 720V, V
GS
= 0
I
D
= 1mA, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
900
15
1
L = 3.4mH, I
D
= 3A, V
DD
= 50V
mJ
V
Ω
S
nt
in
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
5
5
3.8
2.2
co
1.5
is
730
90
40
40
35
pF
pF
pF
ns
ns
ns
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
nt
ai
V
DD
= 200V, R
L
= 100Ω
105
1
Power F-MOS FETs
I
D
V
DS
6
3.2
2SK1612
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (S)
R
DS(on)
I
D
V
DS
=25V
T
C
=25˚C
T
C
=25˚C
5
V
GS
=15V 10V
7V
4
Drain to source ON-resistance R
DS(on)
(
Ω
)
10
T
C
=25˚C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
8
Drain current I
D
(A)
6
V
GS
=10V
4
15V
3
6V
2
1
5V
P
D
=50W
2
0
0
10
20
30
40
4V
50
0
0
1
2
3
4
5
6
60
0
1
2
3
4
5
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
I
D
V
GS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
6
V
DS
=25V
T
C
=25V
5
10000
C
iss
, C
oss
, C
rss
V
DS
160
f=1MHz
T
C
=25˚C
140
t
on
, t
f
, t
d(off)
I
D
V
DD
=200V
V
GS
=10V
T
C
=25˚C
t
d(off)
100
80
60
t
on
40
t
f
20
0
3000
Switching time t
on
,t
f
,t
d(off)
(ns)
240
Drain current I
D
(A)
120
4
1000
C
iss
300
3
2
100
C
rss
30
C
oss
10
0
40
80
120
160
200
1
0
0
2
4
6
8
10
0
1
2
3
4
5
6
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
P
D
Ta
60
Area of safe operation (ASO)
100
30
10
3
1
0.3
0.1
0.03
30
EAS
T
j
Avalanche energy capacity EAS (mJ)
I
D
=3A
V
DD
=50V
25
Allowable power dissipation P
D
(W)
50
(1) T
C
=Ta
(2) Without heat sink
(P
D
=2W)
Non repetitive pulse
T
C
=25˚C
40
(1)
30
Drain current I
D
(A)
I
DP
I
D
DC
t=1ms
20
15
20
10ms
10
10
(2)
0
0
20
40
60
80 100 120 140 160
0.01
1
3
10
30
100
300
1000
5
0
25
50
75
100
125
150
175
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Junction temperature T
j
(˚C)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
