2SK1663-L,S
F-I Series
> Features
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
N-channel MOS-FET
800V
4Ω
3A
80W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC Converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
P
T
T
GS
D
ch
stg
> Equivalent Circuit
Rating
800
3
12
3
±20
80
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
V
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA
V
DS=
V
GS
V
DS
=800V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±20V
V
DS
=0V
I
D
=1,5A
V
GS
=10V
I
D
=1,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=2,1A
V
GS
=10V
R
GS
=50Ω
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
800
2,1
Typ.
3,0
0,01
0,2
10
3
4
900
90
35
20
40
150
60
1
400
Max.
4,0
0,5
1,0
100
4
1400
140
60
30
60
250
90
1,35
Unit
V
V
mA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
125
1,56
Unit
°C/W
°C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
800V
4Ω
2SK1663-L,S
F-I Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
3A
80W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
11
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
