2SK1869(L), 2SK1869(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
No Secondary Breakdown
•
Suitable for Switching regulator, DC - DC converter
Outline
LDPAK
4
4
1 2
1
D
G
2
3
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1869(L), 2SK1869(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
350
±30
7
28
7
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK1869(L), 2SK1869(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
350
±30
—
—
2.0
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.6
5.0
635
230
40
10
50
60
40
0.95
240
Max
—
—
±10
250
3.0
0.8
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
=280 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V*
1
I
D
= 4 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 4 A
V
GS
= 10 V
R
L
= 7.5Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
See characteristic curves of 2SK1400A
3
Unit: mm
10.2
±
0.3
(1.4)
4.44
±
0.2
1.3
±
0.2
0.3
10.0
+ 0.5
–
11.3
±
0.5
8.6
±
0.3
1.27
±
0.2
0.2
0.86
+ 0.1
–
0.76
±
0.1
2.54
±
0.5
11.0
±
0.5
1.2
±
0.2
2.59
±
0.2
2.54
±
0.5
0.4
±
0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
LDPAK (L)
—
—
1.4 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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