Power F-MOS FETs
2SK2047
2SK2047
Silicon N-Channel Power F-MOS
s
Features
q
Avalanche
Unit : mm
7.0±0.3
3.0±0.2
3.5±0.2
energy capability guaranteed : EAS > 3.6mJ
switching : t
f
= 30ns
0.8±0.2
q
V
GSS
=±30V guaranteed
7.2±0.3
q
High-speed
q
No
secondary breakdown
M
Di ain
sc te
on na
tin nc
ue e/
d
q
Non-contact
q
Solenoid
q
Motor
relay
drive
10.0
-0
+0.3
s
Applications
1.0±0.2
1.1±0.1
0.85±0.1
0.4±0.1
0.75±0.1
drive
2.3±0.2
4.6±0.4
q
Control
equipment
s
Absolute Maximum Ratings
(Tc = 25˚C)
Parameter
Symbol
V
DSS
V
GSS
I
D
I
DP
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
550
Pulse
Avalanche energy capability
Allowable power
dissipation
T
C
= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
* L= 5mH, I
L
= 1.2A, V
DD
= 50V, 1 pulse
s
Electrical Characteristics
(Tc = 25˚C)
Parameter
Symbol
Drain-Source cut-off current
Gate-Source leakage current
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
I
DSS
I
GSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
ea
se
ht v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
Rating
±30
Unit
V
V
A
A
±1.2
±3.6
3.6
15
1.3
EAS
*
P
D
mJ
W
T
ch
150
˚C
˚C
T
stg
–55 to +150
Condition
Min
Typ
Max
0.1
±1
5
5.3
0.4
0.65
–1.5
290
V
DS
= 20V, V
GS
= 0, f=1MHz
40
10
15
V
GS
=10V, I
D
= 0.6A
V
DD
=150V, R
L
=250Ω
20
30
70
8.33
8
V
DS
= 440V, V
GS
= 0
V
GS
=±30V, V
DS
= 0
V
DSS
I
D
=1mA, V
GS
= 0
550
2
V
DS
= 25V, I
D
=1mA
V
GS
=10V, I
D
= 0.6A
V
DS
= 25V, I
D
= 0.6A
I
DR
=1.2A, V
GS
= 0
q
Switching
mode regulator
1
2
3
1 : Gate
2 : Drain
3 : Source
I Type Package
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
˚C/W
Drain-Source breakdown voltage
Pl
Power F-MOS FETs
2SK2047
Area of safe operation (ASO)
100
Non repetitive pulse
T
C
=25˚C
30
10
Drain current I
D
(A)
Allowable power dissipation P
D
(W)
P
D
– Ta
24
(1) T
C
=Ta
(2) Without heat sink
(P
D
=1.3W)
EAS – T
j
6
V
DD
=50V
I
D
=1.2A
20
Avalanche energy capability EAS (mJ)
5
I
DP
3
I
D
1
0.3
0.1
t=1ms
t=10ms
t=100ms
t=100µs
16
4
12
(1)
8
3
M
Di ain
sc te
on na
tin nc
ue e/
d
2
DC
4
1
0.03
0.01
(2)
0
1
3
10
30
100
300
1000
0
20
40
60
80 100 120 140 160
0
25
50
75
100
125
150
Drain-Source voltage V
DS
(V)
Ambient temperature Ta (˚C)
Junction temperature T
j
(˚C)
I
D
–V
DS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
ea
se
ht v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
I
D
–V
GS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
th
– T
C
V
DS
=25V
I
D
=1mA
6
V
GS
=15V
10V
V
DS
=25V
T
C
=25˚C
6.5V
5
6.0V
Gate threshold voltage V
th
(V)
I
D
(A)
I
D
(A)
4
Drain current
Drain current
3
2
5.5V
15W
1
5V
4V
0
0
10
20
30
40
50
60
0
2
4
6
8
10
12
0
25
50
75
100
125
150
Drain-Source voltage
V
DS
(V)
Gate-Source voltage V
GS
(V)
Case temperature T
C
(˚C)
R
DS(on)
– I
D
| Y
fs
| – I
D
C
iss,
C
oss,
C
rss
– V
DS
f=1MHz
T
C
=25˚C
Pl
T
C
=25˚C
Drain-Source ON-resistance R
DS(on)
(
Ω
)
V
DS
=25V
T
C
=25˚C
8
V
GS
=10V
6
15V
| Y
fs
|
(S)
1.0
Input capacitance, Output capacitance,
C
iss
, C
oss
, C
rss
(pF)
Feedback capacitance
10
1.2
1000
300
C
iss
0.8
100
Forward transadmittance
0.6
30
C
oss
10
4
0.4
2
0.2
3
C
rss
0
0
0.4
0.8
1.2
1.6
2.0
Drain current I
D
(A)
0
0
0.4
0.8
1.2
1.6
Drain current I
D
(A)
1
0
50
100
150
200
Drain-Source voltage V
DS
(V)
Power F-MOS FETs
2SK2047
V
DS,
V
GS
– Q
g
250
I
D
=1.2A
T
C
=25˚C
20
18
Gate-Source voltage V
GS
(V)
100
t
d(on),
t
r,
t
f,
t
d(off)
– I
D
V
DD
=150V
V
GS
=10V
T
C
=25˚C
80
(ns)
Drain-Source voltage V
DS
(V)
200
V
DS
=100V
150
16
14
12
10
t
d(off)
60
100
V
DS
=200V
8
6
4
2
Switching time t
40
t
f
Pl
ea
se
ht v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
M
Di ain
sc te
on na
tin nc
ue e/
d
t
r
50
20
t
d(on)
0
0
2
4
6
8
10
0
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Gate charge amount Q
g
(nc)
Drain current I
D
(A)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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