To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
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(http://www.renesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
and DC/DC converters.
characteristics and is ideal for driving the actuator, such as motors
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
2.5 ± 0.1
4.0 ± 0.25
1.5 ± 0.1
0.8 MIN.
S
0.42
±0.06
D
G
FEATURES
• Low ON resistance
R
DS(on)
= 1.0
Ω
MAX. @V
GS
= 4.0 V, I
D
= 0.3 A
• High switching speed
t
on
+ t
off
< 100 ns
• Low parasitic capacitance
0.42
0.47 ±0.06
1.5 ±0.06
3.0
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate protection
diode
Source (S)
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
50 %
16 cm
2
×
0.7 mm, ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
60
±20
±0.5
±1.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
–55 to +150
W
˚C
˚C
Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996
2SK2109
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 25 V, I
D
= 0.3 A
V
GS(on)
= 10 V, R
G
= 10
Ω
R
L
= 83
Ω
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 0.3 A
V
GS
= 4.0 V, I
D
=0.3 A
V
GS
= 10 V, I
D
= 0.3 A
V
DS
= 10 V, V
GS
= 0,
f = 1.0 MHz
0.8
0.4
0.55
0.41
111
55
19
2.2
1.5
35
19
1.0
0.8
1.5
MIN.
TYP.
MAX.
1.0
±10
2.0
UNIT
µ
A
µ
A
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
2SK2109
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
10
5
d
T
- Derating Factor - %
FORWARD BIAS SAFE OPERATING AREA
80
I
D
- Drain Current - A
60
2
1
0.5
DC
40
10
1m
s
m
s
PW
20
0.2
Single pulse
0
0.1
30
60
90
120
T
A
- Ambient Temperature - ˚C
150
0
2
=
10
0
m
s
5
10
20
50
V
DS
- Drain to Source Voltage - V
100
10 V
1.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1
10 V
3.0 V
4.5 V
4.0 V
3.5 V
TRANSFER CHARACTERISTICS
V
DS
= 10 V
0.8
I
D
- Drain Current - A
I
D
- Drain Current - A
2.5 V
0.1
T
A
= 75 ˚C
25 ˚C
–25 ˚C
0.01
0.6
0.4
0.001
0.2
V
GS
= 2.0 V
0
0.4
0.8
1.2
1.6
V
DS
- Drain to Source Voltage - V
2.0
0.0001
0.5
1
1.5
2
2.5
V
GS
- Gate to Source Voltage - V
3
10
| y
fs
| - Forward Transfer Admittance - S
R
DS(ON)
- Drain to Source On-State Resistance -
Ω
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
V
GS
= 4 V
T
A
= 75 ˚C
25 ˚C
0.5
–25 ˚C
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
0.1
0.01
0.001
0.01
0.1
I
D
- Drain Current - A
1
0
0.01
0.1
1
I
D
- Drain Current - A
10
3
