DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
0.8 MIN.
PACKAGE DIMENSIONS
(in millimeters)
4.5
±
0.1
1.6
±
0.2
4.0
±
0.25
2.5
±
0.1
1.5
±
0.1
1
0.42
±
0.06
2
3
FEATURES
• Capable of drive gate with 1.5 V
• Small R
DS(on)
R
DS(on)
= 0.7
Ω
MAX. @V
GS
= 1.5 V, I
D
= 0.1 A
R
DS(on)
= 0.3
Ω
MAX. @V
GS
= 4.0 V, I
D
= 1.0 A
0.47
1.5
±
0.06
3.0
0.42
±
0.06
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
2
3
Gate protection
diode
1
Internal diode
PIN CONNECTION
1. Source (S)
2. Drain (D)
Marking: NW
3. Gate (G)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty Cycle
≤
50 %
Mounted on 16 cm
2
×
0.7 mm ceramic substrate.
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATINGS
60
±14
±2.0
±4.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
–55 to +150
W
˚C
˚C
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
2SK2159
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Drain to Source On-state Resistance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 25 V, I
D
= 1.0 A
V
GS(on)
= 3 V, R
G
= 10
Ω
R
L
= 25
Ω
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0
V
GS
=
±14
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 1.0 A
V
GS
= 1.5 V, I
D
= 0.1 A
V
GS
= 2.5 V, I
D
= 1.0 A
V
GS
= 4.0 V, I
D
= 1.0 A
V
DS
= 10 V, V
GS
= 0,
f = 1.0 MHz
0.5
0.4
0.55
0.27
0.22
319
109
22
38
128
237
130
0.7
0.5
0.3
0.9
MIN.
TYP.
MAX.
1.0
±10
1.1
UNIT
µ
A
µ
A
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
2SK2159
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
10
5
dT - Derating Factor - %
FORWARD BIAS SAFE OPERATING AREA
Single pulse
1
80
I
D
- Drain Current - A
m
s
2
1
0.5
DC
60
10
PW
=
m
s
40
10
0
m
s
20
0.2
30
60
90
120
150
0.1
1
2
5
10
20
50
100
0
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
10
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
V
DS
= 10 V
4
I
D
- Drain Current - A
3
V
5
V
V
3.
3.0
.5
V
2
V
7
0
2.
I
D
- Drain Current - A
1
T
A
= 75 °C
25 ° C
–25 °C
1.5 V
2
0.1
1
V
GS
= 1.0 V
0
0.4
0.8
1.2
1.6
2.0
0.01
0.001
0
1
2
3
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
T
A
= 75 °C
25 °C
–25 °C
V
GS
= 1.5 V
10
V
DS
= 10 V
1
T
A
= –25 °C
25 °C
75 °C
0.1
0.01
0.001
0.01
0.1
1
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
Ω
I
D
- Drain Current - A
3
2SK2159
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.4 V
GS
= 2.5 V
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
T
A
= 75
°C
25
°C
–25
°C
0.1
1
10
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.4 V
GS
= 4.0 V
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
T
A
= 75
°C
25
°C
–25
°C
0.1
1
10
R
DS(on)
- Drain to Source On-State Resistance -
Ω
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.8
1 000
500
R
DS(on)
- Drain to Source On-State Resistance -
Ω
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
Ω
C
iss
200
100
50
C
oss
0.6
0.4
I
D
= 2 A
0.2
I
D
= 1 A
0
2
4
6
8
10
12
14
20
V
GS
= 0
f = 1 MHz
10
1
2
C
rss
5
10
20
50
100
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
I
SD
- Source to Drain Current - A
SWITCHING CHARACTERISTICS
1 000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
500
t
d(off)
t
r
t
f
t
d(on)
V
DD
= 25 V
V
GS(on)
= 3 V
R
G
= 10
Ω
0.2
0.5
1
2
5
10
I
D
- Drain Current - A
1
200
100
50
0.1
0.01
20
10
0.1
0.001
0.4
0.6
0.8
1.0
1.2
V
SD
- Source to Drain Voltage - V
4
2SK2159
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
