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2SK2796S-E

5A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

器件类别:分立半导体    晶体管   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
SMALL OUTLINE, R-PSSO-G2
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
外壳连接
DRAIN
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (ID)
5 A
最大漏源导通电阻
0.25 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PSSO-G2
JESD-609代码
e6
湿度敏感等级
1
元件数量
1
端子数量
2
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
245
极性/信道类型
N-CHANNEL
最大脉冲漏极电流 (IDM)
20 A
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN BISMUTH
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
20
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-534C (Z)
4th. Edition
Jul. 1998
Features
Low on-resistance
R
DS(on)
= 0.12Ω typ.
4V gate drive devices.
High speed switching
Outline
DPAK
|1
4
4
D
1 2
G
3
S
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
60
±20
5
20
5
5
2.14
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
10µs, duty cycle
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
2SK2796(L), 2SK2796(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
60
±20
1.0
2.5
Typ
0.12
0.16
4.0
180
90
30
9
25
35
55
1.0
40
Max
10
±10
2.0
0.16
0.25
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 5A, V
GS
= 0
I
F
= 5A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
= ±100µA, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
= ±16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 3 A, V
GS
= 10V
Note4
I
D
= 3A, V
GS
= 4V
Note4
I
D
= 3A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
V
GS
= 10V, I
D
= 3A
R
L
= 10Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
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