2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-570
1st. Edition
Features
•
Low on-resistance
R
DS
= 0.033
Ω
typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
1 2
G
3
S
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2869
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
Tch
Tstg
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2
2SK2869
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
Min
60
±20
—
—
1.5
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.033
0.055
16
740
380
140
10
110
105
120
1.0
40
Max
—
—
±10
10
2.5
0.045
0.07
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
V
I
F
= 20A, V
GS
= 0
I
F
= 20A, V
GS
= 0
diF/ dt = 50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V*
1
I
D
= 10A, V
GS
= 4V*
1
I
D
= 10A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 10A, V
GS
= 10V
R
L
= 3Ω
Static drain to source on state R
DS(on)
resistance
Forward transfer admittance
Input capacitance
Output capacitance
R
DS(on)
|y
fs
|
Ciss
Coss
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK2869
Main Characteristics
Power vs. Temperature Derating
40
Pch (W)
I
D
(A)
Maximum Safe Operation Area
200
100
10
10
DC
30
50
20
10
5
PW
Op
e
Channel Dissipation
Drain Current
=1
1m
0m
(T
0
µ
s
µ
s
s
ho
20
rat
ion
s(
1s
25
10
Operation in
2
this area is
1 limited by R
DS(on)
0.5
0.2
Ta = 25
°C
1
c=
t)
°
C
)
0
50
100
150
Tc (°C)
200
Case Temperature
2
5
10 20
50 100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
I
D
(A)
40
6V
5V
Pulse Test
4.5 V
30
4V
20
3.5 V
10
V
GS
= 3 V
(A)
16
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
Drain Current
12
Drain Current
8
Tc = 75°C
25°C
–25°C
4
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
4
2SK2869
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
1.0
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.8
0.6
I
D
= 15 A
0.4
10 A
5A
0.1
V
GS
= 4 V
10 V
0.05
0.2
0.02
0.01
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
0.1 0.2
0.5 1 2
5 10 20
Drain Current I
D
(A)
50
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
10 A
0.08
V
GS
= 4 V
2, 5 A
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I
D
(A)
100
75
°C
Tc = –25
°C
25
°C
0.06
0.04
10 V
2, 5, 10 A
0.02
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
5
