2SK2932
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-555B (Z)
3rd. Edition
Jun 1998
Features
•
Low on-resistance
R
DS
=0.055
Ω
typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G
1
2
3
S
1. Gate
2. Drain
3. Source
2SK2932
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
60
±20
10
40
10
10
8.5
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50Ω
2
2SK2932
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
60
±20
—
—
1.5
—
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.055
0.090
8
350
190
70
10
55
60
70
0.9
50
Max
—
—
±10
10
2.5
0.075
0.150
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 10A, V
GS
= 0
I
F
= 10A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
Note4
I
D
= 5A, V
GS
= 4V
Note4
I
D
= 5A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 5A, V
GS
= 10V
R
L
= 6Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK2932
Main Characteristics
Power vs. Temperature Derating
40
1000
300
Pch (W)
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
30
I
D
(A)
100
30
10
3
1
0.3
10
PW
µs
Channel Dissipation
20
Drain Current
DC
=1
Op
0m
10
0
1 m
µs
s
s(
1s
h
ot)
)
era
t
ion
10
(T
c=
25
°C
0
50
100
150
200
0.1
0.1
Ta = 25°C
3
0.3
1
10
Drain to Source Voltage V
30
(V)
DS
100
Case Temperature Tc (°C)
Typical Output Characteristics
10 V 6 V
20
Pulse Test
16
I
D
(A)
Typical Transfer Characteristics
20
5V
I
D
(A)
16
Tc = –25°C
12
25°C
12
4V
75°C
Drain Current
8
Drain Current
8
4
3V
V
GS
= 2.5 V
4
V
DS
= 10 V
Pulse Test
0
2
4
6
Drain to Source Voltage V
8
(V)
DS
10
0
2
4
6
Gate to Source Voltage V
8
(V)
GS
10
4
2SK2932
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
1.6
Drain to Source On State Resistance
R
DS(on)
(
W
)
2.0
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
V
GS
= 4 V
10 V
1.2
0.8
I
D
= 10 A
0.4
5A
2A
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
0.05
0.02
0.01
1
2
5
10 20
50
Drain Current I
D
(A)
100
0
Static Drain to Source on State Resistance
R
DS(on)
(
W
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
Forward Transfer Admittance vs.
Drain Current
20
10
5
Tc = –25 °C
0.3
I
D
= 10 A
0.2
V
GS
= 4 V
0.1
0
–40
10 V
10 A 2, 5 A
5A 2A
25 °C
75 °C
2
1
0.5
0.1 0.2
V
DS
= 10 V
Pulse Test
0.5 1
2
5 10 20
Drain Current I
D
(A)
0
40
80
120
160
Case Temperature Tc (°C)
5
