2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-721B (Z)
3rd. Edition
February 1999
Features
•
Low on-resistance
R
DS(on)
= 4 mΩ typ.
•
Low drive current
•
4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
D
1
1
2
3
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK3134(L),2SK3134(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Note 3
Note 3
Note 2
Note 1
Ratings
30
±20
75
300
75
35
122
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
E
AR
Pch
Tch
Tstg
1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
2
2SK3134(L),2SK3134(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
30
—
—
1.0
—
—
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
50
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.0
5.5
80
6800
1550
500
130
16
30
50
370
550
380
1.05
80
Max
—
±0.1
10
2.5
5.0
8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
I
F
= 75 A, V
GS
= 0
I
F
= 75 A, V
GS
= 0
diF/ dt = 5 A/
µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 4 V
Note 1
I
D
= 40 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.25
Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
1. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
3
2SK3134(L),2SK3134(S)
Main Characteristics
Power vs. Temperature Derating
160
1000
Maximum Safe Operation Area
300
100
30
10
Pch (W)
10
0µ
PW
s
1
=
m
DC
10
s
Op
ms
(1
e
s
(T rati
c = on
hot
)
25
Operation in
°C
)
10
120
Channel Dissipation
80
Drain Current
I
D
(A)
µs
40
3 this area is
limited by R
DS(on)
1
0.3
0
50
100
150
Tc (°C)
200
Case Temperature
0.1 Ta = 25°C
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
Typical Transfer Characteristics
100
V
GS
= 10 V
5V
4V
60
3V
100
Pulse Test
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
Drain Current
(A)
80
80
60
Drain Current
40
40
25°C
20
75°C
Tc = –25°C
4
5
V
GS
(V)
20
2.5 V
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
Gate to Source Voltage
4
2SK3134(L),2SK3134(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
3
1
0.4
0.3
I
D
= 50 A
V
GS
= 4 V
10 V
0.2
0.1
10 A
0
12
4
8
Gate to Source Voltage
20 A
0.3
0.1
16
20
V
GS
(V)
1
3
30
10
Drain Current
100 300 1000
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current I
D
(A)
100
25
°C
75
°C
Tc = –25
°C
V
DS
= 10 V
Pulse Test
12
I
D
= 50 A
10, 20 A
10, 20, 50 A
8
4V
4
0
–50
V
GS
= 10 V
0
50
100
150
200
Case Temperature Tc (°C)
5
