PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3359
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3359
2SK3359-S
2SK3359-Z
PACKAGE
TO-220AB
TO-262
TO-220SMD
DESCRIPTION
The 2SK3359 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 20 mΩ MAX. (V
GS
= 10 V, I
D
= 35 A)
5
5
R
DS(on)2
= 28 mΩ MAX. (V
GS
= 4.5 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 4900 pF TYP.
•
Built-in gate protection diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note1
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
100
±20
+20,
−10
±70
±280
100
1.5
150
–55 to +150
50
250
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-220SMD)
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14323EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999
2SK3359
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 35 A
V
GS
= 4.5 V, I
D
= 30 A
V
DS
= 10 V, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 35 A
V
DS
= 100 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 35 A
V
GS(on)
= 10 V
V
DD
= 50 V
R
G
= 10
Ω
I
D
= 70 A
V
DD
= 80 V
V
GS(on)
= 10 V
I
F
= 70 A, V
GS
= 0 V
I
F
= 70 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
4900
990
580
58
400
340
340
130
14
50
1.0
170
920
1.5
23
MIN.
TYP.
14
19
2.0
47
10
±10
MAX.
20
28
2.5
UNIT
mΩ
mΩ
V
S
5
5
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
5
5
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90 %
90 %
V
GS
V
GS
Wave Form
0
10 %
V
GS
(on)
90 %
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10 %
10 %
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Preliminary Data Sheet D14323EJ1V0DS00
2SK3359
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.0±0.3
10.6 MAX.
10.0
5.9 MIN.
15.5 MAX.
4.8 MAX.
2)TO-262 (MP-25 Fin Cut)
1.0±0.5
φ
3.6±0.2
4.8 MAX.
1.3±0.2
1.3±0.2
(10)
4
1
2
3
4
1 2 3
6.0 MAX.
1.3±0.2
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
0.75±0.1
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3)TO-220SMD (MP-25Z)
(10)
4
1.0±0.5
8.5±0.2
4.8 MAX.
1.3±0.2
EQUIVALENT CIRCUIT
Drain
11±0.4
3.0±0.5
1.4±0.2
1.0±0.3
2.54 TYP. 1
2
R)
)
0.5
.8R
(
(0
Gate
0.5±0.2
Body
Diode
3 2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.8±0.2
Preliminary Data Sheet D14323EJ1V0DS00
3
2SK3359
•
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
•
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
•
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
•
Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
•
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
•
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
