Power MOSFETs
2SK3731
N-channel enhancement mode MOSFET
■
Features
•
Low on-resistance, low Q
g
•
High avalanche resistance
(1.4)
Unit: mm
10.5
±0.3
4.6
±0.2
1.4
±0.1
0.6
±0.1
3.0
±0.5
0 to 0.5
•
For PDP
•
For high-speed switching
1.4
±0.1
0.8
±0.1
2.54
±0.3
2.5
±0.2
0 to 0.3
■
Absolute Maximum Ratings
T
C
=
25°C
1
2
3
(10.2)
(8.9)
(6.4) (1.4)
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation
T
a
=
25°C
Channel temperature
Storage temperature
*
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
P
D
T
ch
T
stg
Rating
230
±30
20
80
668
50
1.4
150
−55
to
+150
Unit
V
V
A
A
mJ
W
(2.1)
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Marking Symbol: K3731
°C
°C
Note) *: L
=
2.79 mH, I
L
=
20 A, V
DD
=
50 V, 1 pulse, T
a
=
25°C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Drain-source surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V
DSS
V
th
I
DSS
I
GSS
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
T
r
t
d(off)
t
f
V
DD
≈
100 V, I
D
=
10 A
R
L
=
10
Ω,
V
GS
=
10 V
Conditions
I
D
=
1 mA, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
DS
=
184 V, V
GS
=
0
V
GS
= ±30
V, V
DS
=
0
V
GS
=
10 V, I
D
=
10 A
V
DS
=
10 V, I
D
=
10 A
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
7
65
14
2 360
394
49
31
27
214
47
Min
230
2.0
4.0
10
±1
82
Typ
Max
Unit
V
V
µA
µA
mΩ
S
pF
pF
pF
ns
ns
ns
ns
1.5
±0.3
■
Applications
10.1
±0.3
Publication date: March 2004
SJG00038AED
1
2SK3731
■
Electrical Characteristics (continued)
T
C
=
25°C
±
3°C
Parameter
Diode foward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Symbol
V
DSF
t
rr
Q
rr
Q
g
Q
gs
Q
gd
R
th(ch-c)
R
th(ch-a)
Conditions
I
DR
=
20 A, V
GS
=
0
L
=
230
µH,
V
DD
=
100 V
I
DR
=
10 A, di/dt
=
100 A/µs
V
DD
=
100 V, I
D
=
10 A
V
GS
=
10 V
142
668
43
6.6
16
2.5
89.2
Min
Typ
Max
−1.5
Unit
V
ns
nC
nC
nC
nC
°C/W
°C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
1 000
Non repetitive pulse
T
C
=
25°C
I
DP
I
D
10
t
=
100
µs
t
=
1 ms
t
=
10 ms
D
C
P
C
T
a
100
(1) T
C
=
T
a
(2) Without heat sink
100
Collector power dissipation P
C
(W)
Drain current I
D
(A)
50
(1)
1
10
−1
(2)
10
−2
1
10
100
1 000
0
0
25
50
75
100
125
150
Drain-source voltage V
DS
(V)
Ambient temperature T
a
(
°C
)
2
SJG00038AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
