Ordering number : EN8638
2SK3836
N-Channel Silicon MOSFET
2SK3836
Features
•
•
•
General-Purpose Switching Device
Applications
Ultrahigh-speed switching.
4V drive.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
33
132
3.0
40
150
--55 to +150
130
33
Unit
V
V
A
A
W
W
°C
°C
mJ
A
*1
VDD=20V, L=200µH, IAV=33A
*2
L≤200µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=17A
ID=17A, VGS=10V
ID=17A, VGS=4V
Ratings
min
100
1
±10
1.2
18
30
26
31
34
43
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3836
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2505QA MS IM TB-00001912 No.8638-1/4
2SK3836
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=33A
VDS=50V, VGS=10V, ID=33A
VDS=50V, VGS=10V, ID=33A
IS=33A, VGS=0V
Ratings
min
typ
4200
300
250
30
65
300
110
79
14
18
0.95
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
7505-003
16.0
3.4
5.6
3.1
Switching Time Test Circuit
VIN
10V
0V
VIN
22.0
VDD=50V
5.0
8.0
ID=17A
RL=2.94Ω
D
2.0
PW=10µs
D.C.≤1%
VOUT
21.0
4.0
2.8
2.0
G
2.0
20.4
1.0
0.6
2SK3836
P.G
50Ω
S
1
2
3
3.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
5.45
5.45
Avalanche Resistance Test Circuit
L
≥50Ω
2SK3836
10V
0V
50Ω
VDD
No.8638-2/4
2SK3836
60
ID -- VDS
6V
60
ID -- VGS
Tc= --
25
°
C
1.0
1.5
2.0
2.5
3.0
8V
50
4V
50
Drain Current, ID -- A
40
Drain Current, ID -- A
40
30
30
20
20
10
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
0.5
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
70
IT08447
80
Gate-to-Source Voltage, VGS -- V
--25
°
C
VGS=3V
25
°
C
Tc=
7
5
°
C
RDS(on) -- VGS
ID=17A
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
70
60
50
40
30
20
10
0
--50
50
40
Tc=75°C
30
25
°
C
--25
°
C
17A
I D=
,
4V
S=
VG
A,
=10
V GS
V
20
17
I D=
10
0
2
3
4
5
6
7
8
9
10
IT08449
--25
0
25
50
75
100
125
25
°
75
°
C
C
IT08448
150
IT08450
1.2
IT08452
Tc=25°C
VDS=10V
10
V
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
Case Temperature, Tc --
°C
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
7
5
VDS=10V
°
C
2
10
7
5
3
2
1.0
7
5
0.1
Tc
-25
=-
°
C
75
°
C
Source Current, IS -- A
3
25
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000
7
5 7 100
IT08451
10000
7
0
0.3
Tc=
7
0.6
--25
°
C
5
°
C
25
°
C
0.9
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
5
3
2
Ciss
tf
100
7
5
3
2
1000
7
5
3
2
100
tr
td(on)
Coss
Crss
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT08453
0
5
10
15
20
25
30
IT08454
Drain-to-Source Voltage, VDS -- V
No.8638-3/4
2SK3836
10
9
VGS -- Qg
VDS=50V
ID=33A
Drain Current, ID -- A
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=132A
ID=33A
10
1m
10
µ
s
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
10
s
ms
1
DC
00m
op
s
era
tio
n
0
µ
s
Operation in
this area is
limited by RDS(on).
Tc=25
°
C
Single pulse
2 3
5 7 1.0
2 3
0.1
0.1
5 7 10
2 3
5 7 100
2 3
Total Gate Charge, Qg -- nC
3.5
IT08455
45
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
IT08456
PD -- Tc
Allowable Power Dissipation, PD -- W
3.0
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08460
Case Temperature, Tc --
°C
IT08461
Note on usage : Since the 2SK3836 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS No.8638-4/4
