2SK4113
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4113
Switching Regulator Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 2.0
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 4.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 720 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
5
15
45
595
5
4.5
150
-55 to 150
A
W
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
mJ
A
mJ
°C
°C
―
SC-67
2-10R1B
JEITA
TOSHIBA
Weight: 1.9 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C(Initial), L
=
43.6 mH, I
AR
=
5.0 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
2SK4113
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
5 A
−
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
3 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
=±10 μA,
V
DS
=
0 V
V
DS
=
720 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
3 A
V
DS
=
20 V, I
D
=
3 A
Min
⎯
±30
⎯
900
2.0
⎯
2.0
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
2.0
4.5
1150
20
100
30
70
60
170
28
17
11
Max
±10
⎯
100
⎯
4.0
2.5
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
66.7
Ω
V
DD
∼
200 V
−
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
5 A, V
GS
=
0 V
I
DR
=
5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
900
5.4
Max
5
15
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K4113
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK4113
I
D
– V
DS
5
COMMON
SOURCE
Tc
=
25°C
PULSE TEST
8
6
10
6
5.5
5.25
COMMON
SOURCE
Tc
=
25°C
PULSE TEST
I
D
– V
DS
10
8
5.5
5.25
(A)
4
DRAIN CURRENT I
D
DRAIN CURRENT I
D
(A)
5
6
4
3
5
2
4.75
1
3
5
2
4.75
VGS
=
4 .5V
VGS
=
4.5 V
1
0
0
4
8
12
16
20
24
0
0
10
20
30
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
I
D
– V
GS
V
DS
(V)
10
COMMON SOURCE
20
V
DS
– V
GS
COMMON SOURCE
Tc
=
25℃
14
PULSE TEST
(A)
8
VDS
=
20 V
PULSE TEST
DRAIN CURRENT I
D
DRAIN-SOURCE VOLTAGE
6
12
ID
=
5 A
4
Tc
= −55°C
2
100
25
0
0
8
3
4
1.5
2
4
6
8
10
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
10
10
R
DS (ON)
– I
D
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5
Tc
= −55°C
25
100
1
3
VGS
=
10 V½15V
COMMON SOURCE
VDS
=
20 V
0.1
0.1
PULSE TEST
1
10
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
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2009-09-29
2SK4113
R
DS (ON)
– Tc
10
10
I
DR
– V
DS
DRAIN REVERSE CURRENT I
DR
(A)
COMMON SOURCE
5
3
Tc
=
25°C
PULSE TEST
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(
Ω)
COMMON SOURCE
PULSE TEST
8
6
ID
=
5A
3
VGS
=
10 V
1.5
1
0.5
0.3
10
4
2
1
3
−0.4
VGS
=
0,
−1
V
−0.8
−1.2
−1.6
0
−80
−40
0
40
80
120
160
0.1
0
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CAPACITANCE – V
DS
10000
5
V
th
– Tc
(pF)
Ciss
1000
GATE THRESHOLD VOLTAGE
V
th
(V)
4
C
3
CAPACITANCE
Coss
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
100
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
0.1
1
3
5
10
30 50
100
Crss
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
100
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
500
20
DRAIN POWER DISSIPATION
P
D
(W)
80
400
VDS
16
VDD
=
100 V
400
VGS
200
60
DRAIN-SOURCE VOLTAGE
300
12
40
200
8
COMMON SOURCE
ID
=
5 A
Tc
=
25°C
PULSE TEST
20
100
4
0
0
0
0
10
20
30
40
0
40
80
120
160
200
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2009-09-29
2SK4113
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
SINGLE PULSE
0.01
t
T
Duty
=
t/T
Rth (ch-c)
=
1.25°C/W
2.78°C/W
0.01
0.001
10μ
100μ
1½
10½
100½
1
10
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
100
1000
E
AS
– T
ch
ID max (PULSED)
*
10
ID max (CONTINUOUS)
*
1 ms
*
1
DC OPERATION
Tc
=
25°C
100
μs
*
AVALANCHE ENERGY
E
AS
(mJ)
800
(A)
600
DRAIN CURRENT I
D
400
0.1
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES
LINEARLY
MUST
WITH
BE
DERATED
IN
INCREASE
200
0.01
1
TEMPERATURE.
VDSS max
100
1000
10000
10
0
25
50
75
100
125
150
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
B
VDSS
I
AR
V
DD
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
43.6mH
V
DS
15 V
−15
V
WAVE FORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
模拟电子
