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3.0SMCJ110C

Trans Voltage Suppressor Diode

器件类别:分立半导体    二极管   

厂商名称:DIOTEC

厂商官网:http://www.diotec.com/

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器件参数
参数名称
属性值
厂商名称
DIOTEC
Reach Compliance Code
compli
ECCN代码
EAR99
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
文档预览
3.0SMCJ5.0 ... 3.0SMCJ170CA
3.0SMCJ5.0 ... 3.0SMCJ170CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2014-02-19
7.9
±0.2
2.2
±0.3
2.1
±0.2
Peak pulse power dissipation
Impuls-Verlustleistung
Nominal Stand-off voltage
Nominale Sperrspannung
Plastic case
Kunststoffgehäuse
3000 W
5.0...170 V
~ SMC
~ DO-214AB
0.21 g
1.2
0.15
5.8
Type
Typ
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
±0.2
7.2
±0.5
Dimensions - Maße [mm]
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
T
A
= 25°C
T
T
= 75°C
T
A
= 25°C
I
F
= 100 A
P
PPM
3
Grenz- und Kennwerte
3000 W
1
)
6W
300 A
2
)
< 3.0 V
2
)
-50...+150°C
-50...+150°C
< 33 K/W
3
)
< 10 K/W
P
M(AV)
I
FSM
V
F
T
j
T
S
R
thA
R
thT
1
2
3
Non-repetitive pulse see curve I
PP
= f (t) / P
PP
= f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP
= f (t) / P
PP
= f (t)
Unidirectional diodes only – Nur für unidirektionale Dioden
Mounted on P.C. board with 50 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 50 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
1
3.0SMCJ5.0 ... 3.0SMCJ170CA
Maximum ratings (T
A
= 25°C)
Type
Typ
Stand-off voltage
Sperrspannung
V
WM
[V]
3.0SMCJ5.0
3.0SMCJ5.0A
3.0SMCJ6.0
3.0SMCJ6.0A
3.0SMCJ6.5
3.0SMCJ6.5A
3.0SMCJ7.0
3.0SMCJ7.0A
3.0SMCJ7.5
3.0SMCJ7.5A
3.0SMCJ8.0
3.0SMCJ8.0A
3.0SMCJ8.5
3.0SMCJ8.5A
3.0SMCJ9.0
3.0SMCJ9.0A
3.0SMCJ10
3.0SMCJ10A
3.0SMCJ11
3.0SMCJ11A
3.0SMCJ12
3.0SMCJ12A
3.0SMCJ13
3.0SMCJ13A
3.0SMCJ14
3.0SMCJ14A
3.0SMCJ15
3.0SMCJ15A
3.0SMCJ16
3.0SMCJ16A
3.0SMCJ17
3.0SMCJ17A
3.0SMCJ18
3.0SMCJ18A
3.0SMCJ20
3.0SMCJ20A
3.0SMCJ22
3.0SMCJ22A
3.0SMCJ24
3.0SMCJ24A
3.0SMCJ26
3.0SMCJ26A
3.0SMCJ28
3.0SMCJ28A
3.0SMCJ30
3.0SMCJ30A
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Max. rev. current
Max. Sperrstrom
at / bei V
WM
I
D
[µA]
800
800
800
800
500
500
200
200
100
100
50
50
20
20
10
10
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Breakdown voltage at I
T
= 1 mA
Abbruch-Spannung bei I
T
= 1 mA
*) I
T
= 10 mA
V
BR
min [V]
6.4 *)
6.4 *)
6.6 *)
6.6 *)
7.2 *)
7.2 *)
7.8 *)
7.8 *)
8.3
8.3
8.9
8.9
9.4
9.4
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
V
BR
max [V]
7.8 *)
7.2 *)
8.1 *)
7.4 *)
8.8 *)
8.0 *)
9.5 *)
8.6 *)
10.1
9.2
10.9
9.9
11.5
10.4
12.2
11.1
13.5
12.3
14.9
13.5
16.2
14.8
17.6
16.0
19.0
17.3
20.4
18.6
21.7
19.8
23.1
21.0
24.4
22.2
27.1
24.6
29.8
27.1
32.6
29.6
35.3
32.1
37.9
34.5
40.1
36.9
Grenzwerte (T
A
= 25°C)
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei I
PPM
(10/1000 µs)
V
C
[V]
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
I
PPM
[A]
312.5
326.0
263.1
291.2
243.9
267.8
225.5
250.0
209.7
232.5
200.0
220.5
188.6
208.3
177.5
194.8
159.5
176.4
149.2
164.8
136.6
150.7
126.0
139.5
116.2
129.3
111.5
122.9
104.1
115.3
98.3
108.7
93.1
102.7
83.8
92.5
76.1
84.5
69.7
77.1
64.3
71.2
60.0
66.0
56.0
61.9
2
http://www.diotec.com/
© Diotec Semiconductor AG
3.0SMCJ5.0 ... 3.0SMCJ170CA
Maximum ratings (T
A
= 25°C)
Type
Typ
Stand-off voltage
Sperrspannung
V
WM
[V]
3.0SMCJ33
3.0SMCJ33A
3.0SMCJ36
3.0SMCJ36A
3.0SMCJ40
3.0SMCJ40A
3.0SMCJ43
3.0SMCJ43A
3.0SMCJ45
3.0SMCJ45A
3.0SMCJ48
3.0SMCJ48A
3.0SMCJ51
3.0SMCJ51A
3.0SMCJ54
3.0SMCJ54A
3.0SMCJ58
3.0SMCJ58A
3.0SMCJ60
3.0SMCJ60A
3.0SMCJ64
3.0SMCJ64A
3.0SMCJ70
3.0SMCJ70A
3.0SMCJ75
3.0SMCJ75A
3.0SMCJ78
3.0SMCJ78A
3.0SMCJ85
3.0SMCJ85A
3.0SMCJ90
3.0SMCJ90A
3.0SMCJ100
3.0SMCJ100A
3.0SMCJ110
3.0SMCJ110A
3.0SMCJ120
3.0SMCJ120A
3.0SMCJ130
3.0SMCJ130A
3.0SMCJ150
3.0SMCJ150A
3.0SMCJ160
3.0SMCJ160A
3.0SMCJ170
3.0SMCJ170A
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Max. rev. current
Max. Sperrstrom
at / bei V
WM
I
D
[µA]
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Breakdown voltage at I
T
= 1 mA
Abbruch-Spannung bei I
T
= 1 mA
*) I
T
= 10 mA
V
BR
min [V]
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
V
BR
max [V]
44.8
40.7
48.4
44.4
54.2
49.3
58.3
53.1
61.0
55.5
65.0
59.2
69.2
62.9
73.2
66.6
78.6
71.5
81.4
74.0
86.7
78.9
94.9
86.4
102
92.5
106
96.2
115
105
122
111
135
123
149
135
162
148
176
160
204
185
217
198
231
210
Grenzwerte (T
A
= 25°C)
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei I
PPM
(10/1000 µs)
V
C
[V]
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
I
PPM
[A]
50.8
56.2
46.6
51.6
42.0
46.5
39.1
43.2
37.3
41.2
35.0
38.7
32.9
36.4
31.1
34.4
29.1
32.0
28.0
30.9
26.3
29.1
24.0
26.5
22.3
24.7
21.5
23.8
19.8
21.9
18.7
20.5
16.7
18.5
15.3
16.9
14.0
15.5
12.9
14.3
11.9
12.3
10.4
11.5
9.8
10.9
© Diotec Semiconductor AG
http://www.diotec.com/
3
3.0SMCJ5.0 ... 3.0SMCJ170CA
120
[%]
100
100
[%]
80
80
t
r
= 10 µs
60
60
P
PPM
/2
I
PPM
/2
40
I
PP
20
P
PP
1
40
I
PP
20
P
PP
0
T
A
50
100
150
[°C]
1
0
0
t
P
0
t
1
2
3
[ms] 4
10/1000µs - pulse waveform
10/1000µs - Impulsform
Peak pulse power/current vs. ambient temperature )
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.
1
)
10
2
[kW]
10
1
P
PP
0.1
0.1µs
t
P
1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
1
Mounted on P.C. board with 25 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 25 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
4
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