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30N06L-TF1-T

N-CHANNEL POWER MOSFET

器件类别：分立半导体    晶体管   

厂商名称：UNISONIC TECHNOLOGIES CO.,LTD

厂商官网：http://www.unisonic.com.tw/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compli
雪崩能效等级（Eas）
300 mJ
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
60 V
最大漏极电流 (Abs) (ID)
30 A
最大漏极电流 (ID)
30 A
最大漏源导通电阻
0.04 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
45 W
最大脉冲漏极电流 (IDM)
120 A
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
文档预览
UNISONIC TECHNOLOGIES CO., LTD
30N06
60V, 30A N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F1
1
TO-220F2
1
TO-220
Power MOSFET
1
TO-220F
The UTC
30N06
is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
FEATURES
1
TO-251
1
TO- 252
* R
DS(ON)
= 40mΩ@V
GS
= 10 V, I
D
=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF1-T
30N06G-TF1-T
TO-220F1
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TM3-T
30N06G-TM3-T
TO-251
30N06L-TN3-T
30N06G-TN3-T
TO-252
30N06L-TN3-R
30N06G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-087.H
30N06
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±20
V
T
C
= 25°C
30
A
Continuous Drain Current
I
D
T
C
= 100°C
21.3
A
Pulsed Drain Current (Note 2)
I
DM
120
A
300
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
8
mJ
TO-220
79
TO-220F/ TO-220F2
45
Power Dissipation
P
D
W
TO-220F1
TO-251/TO-252
46
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, I
AS
=30A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62
62.5
110
1.9
θ
JC
2.7
2.85
°C/W
UNIT
°C/W
PARAMETER
TO-220
TO-220F/ TO-220F2
Junction to Ambient
TO-220F1
TO-251/TO-252
TO-220
TO-220F/ TO-220F2
Junction to Case
TO-220F1
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-087.H
30N06
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
60
V
V
DS
= 60 V, V
GS
= 0 V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
I
D
=250μA,
0.06
V/°C
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 15 A
32
40
mΩ
DYNAMIC CHARACTERISTICS
800
pF
Input Capacitance
C
ISS
V
GS
= 0 V, V
DS
= 25 V,
Output Capacitance
C
OSS
300
pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
50
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
52
ns
Turn-On Rise Time
t
R
96
ns
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
124
ns
Turn-Off Fall Time
t
F
84
ns
Total Gate Charge
Q
G
20
30
nC
V
DS
= 60V, V
GS
= 10 V,
Gate-Source Charge
Q
GS
6
nC
I
D
= 24A (Note 1, 2)
Gate-Drain Charge
Q
GD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 30A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-087.H
30N06
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-087.H
30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-087.H
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参数对比
与30N06L-TF1-T相近的元器件有：30N06G-TF3-T、30N06G-TM3-T、30N06G-TN3-R、30N06G-TN3-T、30N06L-TF2-T、30N06L-TM3-T、30N06L-TN3-R、30N06L-TN3-T、30N06_15。描述及对比如下：
型号 30N06L-TF1-T 30N06G-TF3-T 30N06G-TM3-T 30N06G-TN3-R 30N06G-TN3-T 30N06L-TF2-T 30N06L-TM3-T 30N06L-TN3-R 30N06L-TN3-T 30N06_15
描述 N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET
是否Rohs认证 符合 不符合 符合 符合 符合 符合 符合 符合 符合 -
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code compli compli compli compli compli compli compli compli compli -
雪崩能效等级（Eas） 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ 300 mJ -
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V -
最大漏极电流 (Abs) (ID) 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
最大漏极电流 (ID) 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A -
最大漏源导通电阻 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω 0.04 Ω -
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95代码 TO-220AB TO-220AB TO-251 TO-252 TO-252 TO-220AB TO-251 TO-252 TO-252 -
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 -
元件数量 1 1 1 1 1 1 1 1 1 -
端子数量 3 3 3 2 2 3 3 2 2 -
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT FLANGE MOUNT IN-LINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT IN-LINE SMALL OUTLINE SMALL OUTLINE -
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
最大功率耗散 (Abs) 45 W 45 W 46 W 46 W 46 W 45 W 46 W 46 W 46 W -
最大脉冲漏极电流 (IDM) 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A -
表面贴装 NO NO NO YES YES NO NO YES YES -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING -
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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