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UNISONIC TECHNOLOGIES CO., LTD

30N06

60V, 30A N-CHANNEL

POWER MOSFET



DESCRIPTION

TO-220F1

TO-220F2

TO-220

Power MOSFET

TO-220F

The UTC

30N06

is a low voltage power MOSFET and is

designed to have better characteristics, such as fast switching time,

low gate charge, low on-state resistance and excellent avalanche

characteristics. This power MOSFET is usually used at automotive

applications in power supplies, high efficient DC to DC converters

and battery operated products.



FEATURES

TO-251

TO- 252

* R

DS(ON)

= 40mΩ@V

= 10 V, I

=15A

* Ultra low gate charge ( typical 20nC )

* Low reverse transfer Capacitance ( C

RSS

= typical 80 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability



SYMBOL



ORDERING INFORMATION

Pin Assignment

Packing

Tube

Tape Reel

Ordering Number

Package

Lead Free

Halogen Free

30N06L-TA3-T

30N06G-TA3-T

TO-220

30N06L-TF1-T

30N06G-TF1-T

TO-220F1

30N06L-TF2-T

30N06G-TF2-T

TO-220F2

30N06L-TF3-T

30N06G-TF3-T

TO-220F

30N06L-TM3-T

30N06G-TM3-T

TO-251

30N06L-TN3-T

30N06G-TN3-T

TO-252

30N06L-TN3-R

30N06G-TN3-R

TO-252

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 8

QW-R502-087.H

30N06



ABSOLUTE MAXIMUM RATINGS

= 25°C, unless otherwise specified)

Power MOSFET

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

DSS

Gate to Source Voltage

GSS

±20

= 25°C

Continuous Drain Current

= 100°C

21.3

Pulsed Drain Current (Note 2)

120

300

Single Pulsed (Note 3)

Avalanche Energy

Repetitive (Note 2)

TO-220

TO-220F/ TO-220F2

Power Dissipation

TO-220F1

TO-251/TO-252

Junction Temperature

+150

°C

Operation Temperature

OPR

-55 ~ +150

°C

Storage Temperature

STG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repeativity rating: pulse width limited by junction temperature

3. L=0.66mH, I

=30A, V

=25V, R

=20Ω, Starting T

=25°C



THERMAL DATA

SYMBOL

RATING

62.5

110

1.9

2.7

2.85

°C/W

UNIT

°C/W

PARAMETER

TO-220

TO-220F/ TO-220F2

Junction to Ambient

TO-220F1

TO-251/TO-252

TO-220

TO-220F/ TO-220F2

Junction to Case

TO-220F1

TO-251/TO-252

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 8

QW-R502-087.H

30N06



ELECTRICAL CHARACTERISTICS

= 25°C, unless otherwise specified)

SYMBOL

DSS

TEST CONDITIONS

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Power MOSFET

MIN TYP MAX UNIT

= 0 V, I

= 250

μA

= 60 V, V

= 0 V

μA

100 nA

Forward

= 20V, V

= 0 V

Gate-Source Leakage Current

GSS

Reverse

= -20V, V

= 0 V

-100 nA

=250μA,

0.06

V/°C

Breakdown Voltage Temperature Coefficient

△

DSS

/△T

Referenced to 25°C

ON CHARACTERISTICS

Gate Threshold Voltage

GS(TH)

= V

, I

= 250

μA

2.0

4.0

Static Drain-Source On-State Resistance

DS(ON)

= 10 V, I

= 15 A

mΩ

DYNAMIC CHARACTERISTICS

800

Input Capacitance

ISS

= 0 V, V

= 25 V,

Output Capacitance

OSS

300

f = 1MHz

Reverse Transfer Capacitance

RSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

D(ON)

Turn-On Rise Time

= 30V, I

=15 A, V

=10V

(Note 1, 2)

Turn-Off Delay Time

D(OFF)

124

Turn-Off Fall Time

Total Gate Charge

= 60V, V

= 10 V,

Gate-Source Charge

= 24A (Note 1, 2)

Gate-Drain Charge

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

= 0 V, I

= 30A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

120

Forward Current

Notes: 1. Pulse Test : Pulse width

≤300μs,

Duty cycle

≤

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-087.H

30N06



TEST CIRCUITS AND WAVEFORMS

Power MOSFET

D.U.T.

Driver

Same Type

as D.U.T.

* dv/dt controlled by R

* I

controlled by pulse period

* D.U.T.-Device Under Test

(Driver)

P.W.

Period

P. W.

Period

= 10V

, Body Diode Forward Current

(D.U.T.)

Body Diode Reverse Current

di/dt

Body Diode Recovery dv/dt

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 8

QW-R502-087.H

30N06



TEST CIRCUITS AND WAVEFORMS (Cont.)

Power MOSFET

Switching Test Circuit

Switching Waveforms

12V

50kΩ

0.2μF

0.3μF

Same Type

as D.U.T.

10V

DUT

1mA

Charge

Gate Charge Test Circuit

Gate Charge Waveform

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

5 of 8

QW-R502-087.H

参数对比

与30N06L-TN3-T相近的元器件有：30N06G-TF3-T、30N06G-TM3-T、30N06G-TN3-R、30N06G-TN3-T、30N06L-TF1-T、30N06L-TF2-T、30N06L-TM3-T、30N06L-TN3-R、30N06_15。描述及对比如下：

型号	30N06L-TN3-T	30N06G-TF3-T	30N06G-TM3-T	30N06G-TN3-R	30N06G-TN3-T	30N06L-TF1-T	30N06L-TF2-T	30N06L-TM3-T	30N06L-TN3-R	30N06_15
描述	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET	N-CHANNEL POWER MOSFET
是否Rohs认证	符合	不符合	符合	符合	符合	符合	符合	符合	符合	-
厂商名称	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-
包装说明	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	-
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compli	-
雪崩能效等级（Eas）	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	300 mJ	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V	-
最大漏极电流 (Abs) (ID)	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A	-
最大漏极电流 (ID)	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A	-
最大漏源导通电阻	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	0.04 Ω	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95代码	TO-252	TO-220AB	TO-251	TO-252	TO-252	TO-220AB	TO-220AB	TO-251	TO-252	-
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSIP-T3	R-PSSO-G2	-
元件数量	1	1	1	1	1	1	1	1	1	-
端子数量	2	3	3	2	2	3	3	3	2	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	FLANGE MOUNT	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	IN-LINE	SMALL OUTLINE	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
最大功率耗散 (Abs)	46 W	45 W	46 W	46 W	46 W	45 W	45 W	46 W	46 W	-
最大脉冲漏极电流 (IDM)	120 A	120 A	120 A	120 A	120 A	120 A	120 A	120 A	120 A	-
表面贴装	YES	NO	NO	YES	YES	NO	NO	NO	YES	-
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-