首页 > 器件类别 > 分立半导体 > 二极管

3PMT100C

Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
111 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
YES
技术
AVALANCHE
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities only
found in larger packages. They are most often used for protecting against transients
from inductive switching environments or induced secondary lightning effects as
found in lower surge levels of IEC61000-4-5. With very fast response times, they are
also effective in protection from ESD or EFT. Powermite
®
package features include a
full metallic bottom that eliminates the possibility of solder-flux entrapm ent during
assembly. They also provide unique locking tab acting as an integral heat sink. With
its very short terminations, parasitic inductance is minimized to reduce voltage
overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
POWERMITE
®
WWW.
Microsemi
.
COM
FEATURES
Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional
(C suffix for bi-directional)
APPLICATIONS / BENEF ITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps (8.3 ms)
(excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Lead and mounting temperature: 260°C for 10 sec
MECHANICAL AND PACKAGING
Terminals tin-lead plated
Two-lead side internally connected together
Cathode designated with band (unidirectional)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
Tape & Reel packaging per EIA-481-2
(16 mm - 6000 units/reel)
P E A K P U L S E P O W E R R A TI N G S
P
pp
– Peak Pulse Power – kW
Peak Pulse Power (P
pp
) or Current (I
pp
)
in percent of 25º C rating
100
100
75
50
25
0
0
50 100 150 200
10
3PMT
1.0
.10
100ns
1µs
10µs
100µs
1ms
10ms
t
d
– Pulse Time – sec
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
T – Temperature – ºC
Page 1
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
MICROSEMI
PART NUMBER
STAND
OFF
VOLTAGE
V
WM
VOLTS
3PMT5.0
3PMT6.0
3PMT6.5
3PMT7.0
3PMT7.5
3PMT8.0
3PMT8.5
3PMT9.0
3PMT10
3PMT11
3PMT12
3PMT13
3PMT14
3PMT15
3PMT16
3PMT17
3PMT18
3PMT20
3PMT22
3PMT24
3PMT26
3PMT28
3PMT30
3PMT33
3PMT36
3PMT40
3PMT43
3PMT45
3PMT48
3PMT51
3PMT54
3PMT58
3PMT60
3PMT64
3PMT70
3PMT75
3PMT78
3PMT85
3PMT90
3PMT100
3PMT110
3PMT120
3PMT130
3PMT150
3PMT160
3PMT170
5
6
6.5
7
7.5
8
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
6.40
6.67
7.22
7.78
8.33
8.89
9.94
10.0
11.1
12.2
13.3
14.4
15.8
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
CLAMPING
VOLTAGE
V
C
@ I
PP
(FIGURE 2)
VOLTS
MAX
9.60
11.4
12.3
13.3
14.3
15.0
15.9
16.9
18.8
20.1
22.0
23.8
25.8
26.9
28.8
30.5
32.2
35.8
39.4
43.0
46.6
50.0
53.5
59.0
64.3
71.4
76.7
80.3
85.5
91.1
96.3
103
107
114
125
134
139
151
160
179
196
214
231
268
287
304
PEAK PULSE
CURRENT
I
PP
(FIGURE 2)
AMPS
156.2
131.6
122.0
112.8
104.9
100.0
94.3
88.7
79.8
74.6
68.2
63.0
58.1
55.8
52.1
49.2
46.6
41.9
48.1
34.9
32.2
30.0
28.0
25.2
23.3
21.0
19.6
18.7
17.5
16.5
15.6
14.6
14.0
13.2
12.0
11.2
10.8
9.9
9.4
8.4
7.7
7.0
6.5
5.6
5.2
4.9
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
1000
1000
500
200
100
50
25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
TEMPERATURE
COEFFICIENT
OF V
BR
a
VBR
%/°C
MAX
.057
.059
.061
.065
.067
.070
.073
.076
.078
.081
.082
.084
.086
.087
.088
.090
.092
.093
.094
.096
.097
.098
.099
.100
.101
.101
.102
.102
.103
.103
.104
.104
.104
.105
.105
.105
.106
.106
.107
WWW.
Microsemi
.
COM
3PMT
.107
.107
.107
.108
.108
.108
.108
For bi-directional indicate a C suffix after the part number (i.e.: 3PMT170C). Capacitance will be ½ that shown in figure 1.
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
DEFINITIONS
Symbol
V
RWM
V
BR
V
C
I
D
DEFINITION
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Minimum Clamping Voltage: The maximum voltage the device will exhibit at the peak pulse current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
10000
WWW.
Microsemi
.
COM
Measured at Zero Bias
Ipp -- Peak Pulse Current -- % Ipp
100
Peak Value -- Ipp
10
/
1000 Waveform
Capacitance in picofarads
1000
50
Half -Value -- Ipp
2
100
Measured at Stand - off Voltage
10
1
V
BR
:
0
0
t
r
500
t
1000
1500
10
100
1000
Breakdown Voltage in volts
d
t -- Time in microseconds
figure 1
OUTLINE AND PAD LAYOUT
figure 2
A
INCHES
NOMINAL
0.070
0.173
0.200
0.035
0.160
0.072
0.056
0.044
0.190
0.210
0.038
0.034
0.030
0.030
MILLIMETERS
NOMINAL
1.778
4.392
5.080
0.889
4.064
1.829
1.422
1.118
4.826
5.344
0.965
0.864
0.762
0.762
J
P
N
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
B
C
D
L
M
Mounting Pad
3PMT
E
G
H
F
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
查看更多>
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消