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3SK180-6

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
包装说明
SMALL OUTLINE, R-PDSO-G4
针数
4
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
SOURCE
配置
SINGLE
最小漏源击穿电压
15 V
最大漏极电流 (Abs) (ID)
0.03 A
最大漏极电流 (ID)
0.03 A
FET 技术
METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)
0.05 pF
最高频带
VERY HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-G4
元件数量
1
端子数量
4
工作模式
DUAL GATE, DEPLETION MODE
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
0.2 W
最小功率增益 (Gp)
22 dB
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
Ordering number:ENN2129B
N-Channel Silicon MOSFET (Dual Gate)
3SK180
High-Frequency General-Purpose Amplifier
Applications
Applications
· FM tuners and VHF tuners.
Package Dimensions
unit:mm
2046A
[3SK180]
0.5
1.9
0.95 0.95
0.4
4
3
0 to 0.1
Features
· High power gain and low noise figure.
· High forward transfer admittance.
0.16
1
2
0.95 0.85
2.9
0.5
0.6
1.5
2.5
1 : Drain
2 : Source
3 : Gate 1
4 : Gate 2
SANYO : CP4
0.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Conditions
1.1
Ratings
15
±7
±7
30
200
125
–55 to +125
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Breakdown Voltage
Gate2-to-Source Breakdown Voltage
Gate1-to-Source Cutoff Voltage
Gate2-to-Source Cutoff Voltage
Gate1-to-Source Leakage Current
Gate2-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Symbol
VDS
V(BR)G1SS
V(BR)G2SS
Conditions
VG1S=–4V, VG2S=0V, IDS=100µA
IG1=10µA, VDS=0, VG2S=0V
IG2=10µA, VDS=0, VG1S=0V
VDS=10V, VG2S=4V, ID=100µA
VDS=10V, VG1S=0V, ID=100µA
VG1S=±5V, VG2S=VDS=0V
VG2S=±5V, VG1S=VDS=0V
VDS=10V, VG1S=0, VG2S=4V
Ratings
min
15
±7
±7
–3
–2.5
±50
±50
2.5*
24*
typ
max
Unit
V
V
V
V
V
nA
nA
mA
VG1S(off)
VG2S(off)
IG1SS
IG2SS
IDSS
* : The 3SK180 is classified by I
DSS
as follows : (unit : mA)
Marking : DJ
I
DSS
rank : 4, 5, 6
2.5
4
6.0
5.0
5
12.0
10.0
6
24.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129–1/5
3SK180
Continued from preceding page.
Parameter
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Symbol
| yfs |
Ciss
Crss
PG
NF
Conditions
f=1kHz, ID=10mA, VDS=10V, VG2S=4V
VDS=10V, f=1MHz, VG1S=0V, VG2S=4V
VDS=10V, f=1MHz, VG1S=0V, VG2S=4V
VDS=10V, ID=10mA
f=100MHz, VG2S=4V
22
Ratings
min
typ
20
3.0
0.02
28
1.8
3.0
0.05
max
Unit
mS
pF
pF
dB
dB
No.2129–2/5
3SK180
No.2129–3/5
3SK180
PG, NF Specified Test Circuit
No.2129–4/5
3SK180
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 1999. Specifications and information herein are subject to
change without notice.
PS No.2129–5/5
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参数对比
与3SK180-6相近的元器件有:3SK180-4、3SK180-5。描述及对比如下:
型号 3SK180-6 3SK180-4 3SK180-5
描述 RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN
包装说明 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
针数 4 4 4
Reach Compliance Code unknow unknown unknown
ECCN代码 EAR99 EAR99 EAR99
外壳连接 SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE
最小漏源击穿电压 15 V 15 V 15 V
最大漏极电流 (Abs) (ID) 0.03 A 0.03 A 0.03 A
最大漏极电流 (ID) 0.03 A 0.03 A 0.03 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 0.05 pF 0.05 pF 0.05 pF
最高频带 VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
元件数量 1 1 1
端子数量 4 4 4
工作模式 DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
最高工作温度 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.2 W 0.2 W 0.2 W
最小功率增益 (Gp) 22 dB 22 dB 22 dB
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
Base Number Matches 1 1 1
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