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5962-01-352-0374

IC,OP-AMP,QUAD,BIPOLAR,DIP,14PIN,CERAMIC

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
DIP
包装说明
DIP, DIP14,.3
针数
14
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB)
0.2 µA
频率补偿
YES
最大输入失调电压
3000 µV
JESD-30 代码
R-XDIP-T14
低-失调
NO
标称负供电电压 (Vsup)
-15 V
功能数量
4
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-15 V
认证状态
Not Qualified
筛选级别
38535Q/M;38534H;883B
最小摆率
1 V/us
最大压摆率
7.5 mA
供电电压上限
20 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
MILITARY
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最小电压增益
100000
文档预览
®
HA-5104/883
Low Noise, High Performance,
Quad Operational Amplifier
Description
Low noise and high performance are key words describing
the unity gain stable HA-5104/883. This general purpose
quad amplifier offers an array of dynamic specifications
including 1V/µs slew rate (min), and 8MHz bandwidth (typ).
Complementing these outstanding parameters are very low
noise specifications of 4.3nV/√Hz at 1kHz (typ) or 6nV/√Hz
(max).
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifica-
tions are 100dB (min) open loop gain and 55dB channel sep-
aration (min). Economically, the HA-5104/883 also
consumes a very moderate amount of power (225mW per
package) while also saving board space and cost.
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
April 2002
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Input Noise Voltage Density at 1kHz . 6nV/√Hz (Max)
4.3nV/√Hz (Typ)
• Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . .1V/µs (Min)
3V/µs (Typ)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 8MHz (Typ)
• High Open Loop Gain (Full Temp) . . . . . 100kV/V (Min)
250kV/V (Typ)
• High CMRR, PSRR (Full Temp). . . . . . . . . . . 86dB (Min)
100dB
(Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/
o
C (Typ)
• No Crossover Distortion
• Standard Quad Pinout
Applications
• High Q Active Filters
• Audio Amplifiers
• Integrators
• Signal Generators
• Instrumentation Amplifiers
Ordering Information
PART
NUMBER
HA1-5104/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
PACKAGE
14 Lead CerDIP
Pinout
HA-5104/883
(CERDIP)
TOP VIEW
1
2
3
4
5
6
7
+2
-
-1
+
4-
+
14 OUT 4
13 -IN4
12 +IN4
11 V-
+
3-
10 +IN3
9
8
-IN3
OUT 3
OUT 1
-IN1
+IN1
V+
+IN2
-IN2
OUT 2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
1
511014-883
FN3710.1
HA5104/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
(One Amplifier Shorted to Ground)
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
CerDIP Package . . . . . . . . . . . . . . . . . . .
75
o
C/W
20
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
to
±15V
V
INCM
1/2 (V+ - V-)
R
L
2kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 100Ω
V
CM
= 0V,
+R
S
= 100Ω,
-R
S
= 10kΩ
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +3V, V- = -27V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-CMR
V+ = +27V, V- = -3V
1
2, 3
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +5V,
V+ = +10V, V- = -20V,
V
OUT
= -5V
∆V
CM
= -5V,
V+ = +20V, V- = -10V,
V
OUT
= +5V
4
5, 6
4
5, 6
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-2.5
-3.0
-200
-325
-200
-325
-75
-125
+12
+12
-
-
100
100
100
100
86
86
86
86
MAX
2.5
3.0
200
325
200
325
75
125
-
-
-12
-12
-
-
-
-
-
-
-
-
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
-I
B
Input Offset Current
I
IO
Common Mode Range
+CMR
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Spec Number
2
511014-883
HA5104/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
-V
OUT1
R
L
= 2kΩ
1
2, 3
+V
OUT2
R
L
= 10kΩ
1
2, 3
-V
OUT2
R
L
= 10kΩ
1
2, 3
Output Current
+I
OUT
V
OUT
= -5V
1
2, 3
-I
OUT
V
OUT
= +5V
1
2, 3
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V,
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
∆V
SUP
= 10V,
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
10
-
-
12
12
-
-
10
10
-
-
-
-
-6.5
-7.5
86
86
86
86
MAX
-
-
-10
-10
-
-
-12
-12
-
-
-10
-10
6.5
7.5
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
PARAMETERS
Output Voltage Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 2kΩ
-PSRR
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
4
4
4
4
4
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
1
1
-
-
-
-
MAX
-
-
200
200
35
35
UNITS
V/µs
V/µs
ns
ns
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
OUT
= 0 to +200mV
10%
T
R
90%
V
OUT
= 0 to -200mV
10%
T
F
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
Rise and Fall Time
T
R
T
F
Overshoot
+OS
-OS
Spec Number
3
511014-883
HA5104/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= 1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Differential Input
Resistance
Input Noise Voltage
Density
Input Noise Current
Density
Full Power
Bandwidth
Minimum Closed Loop
Stable Gain
Output Resistance
Quiescent Power
Consumption
Channel Separation
SYMBOL
R
IN
E
N
I
N
FPBW
CLSG
R
OUT
PC
CS
CONDITIONS
V
CM
= 0V
R
S
= 20Ω,
f
O
= 1000Hz
R
S
= 2MΩ,
f
O
= 1000Hz
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
Open Loop
V
OUT
= 0V, I
OUT
=
0mA
R
S
= 1kΩ,
A
VCL
= 100V/V,
V
IN
= 100mV
PEAK
at
10kHz Referred to
Input
NOTES
1
1
1
1, 2
1
1
1, 3
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
MIN
250
-
-
32
+1
-
-
55
MAX
-
6
3
-
-
270
225
-
UNITS
kΩ
nV/√Hz
pA/√Hz
kHz
V/V
mW
dB
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characteriza-
tion based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Spec Number
4
511014-883
HA5104/883
Die Characteristics
DIE DIMENSIONS:
95 x 99 x 19 mils
±
1 mils
2420 x 2530 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
1.43 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
175
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA5104/883
+IN2
V+
+IN1
-IN2
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
-IN4
+IN3
V-
+IN4
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Spec Number
5
511014-883
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参数对比
与5962-01-352-0374相近的元器件有:5962-01-329-4439、5962-01-394-6898。描述及对比如下:
型号 5962-01-352-0374 5962-01-329-4439 5962-01-394-6898
描述 IC,OP-AMP,QUAD,BIPOLAR,DIP,14PIN,CERAMIC IC,OP-AMP,QUAD,BIPOLAR,DIP,14PIN,CERAMIC IC,OP-AMP,QUAD,BIPOLAR,DIP,14PIN,CERAMIC
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
零件包装代码 DIP DIP DIP
包装说明 DIP, DIP14,.3 DIP, DIP14,.3 DIP, DIP14,.3
针数 14 14 14
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB) 0.2 µA 0.2 µA 0.2 µA
频率补偿 YES YES YES
最大输入失调电压 3000 µV 3000 µV 3000 µV
JESD-30 代码 R-XDIP-T14 R-XDIP-T14 R-XDIP-T14
低-失调 NO NO NO
标称负供电电压 (Vsup) -15 V -15 V -15 V
功能数量 4 4 4
端子数量 14 14 14
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装主体材料 CERAMIC CERAMIC CERAMIC
封装代码 DIP DIP DIP
封装等效代码 DIP14,.3 DIP14,.3 DIP14,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Not Qualified
筛选级别 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B
最小摆率 1 V/us 1 V/us 1 V/us
最大压摆率 7.5 mA 7.5 mA 7.5 mA
供电电压上限 20 V 20 V 20 V
标称供电电压 (Vsup) 15 V 15 V 15 V
表面贴装 NO NO NO
技术 BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最小电压增益 100000 100000 100000
厂商名称 Renesas(瑞萨电子) - Renesas(瑞萨电子)
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