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5962-9050901M2X

Buffer Amplifier, 1 Func, CQCC20, CERAMIC, LCC-20

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ELANTEC (Renesas )

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器件参数
参数名称
属性值
厂商名称
ELANTEC (Renesas )
包装说明
CERAMIC, LCC-20
Reach Compliance Code
unknown
放大器类型
BUFFER
最大输入失调电压
20000 µV
JESD-30 代码
S-CQCC-N20
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
20
最高工作温度
125 °C
最低工作温度
-55 °C
最小输出电流
0.095 A
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
QCCN
封装形状
SQUARE
封装形式
CHIP CARRIER
认证状态
Not Qualified
筛选级别
MIL-STD-883
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
温度等级
MILITARY
端子形式
NO LEAD
端子位置
QUAD
Base Number Matches
1
文档预览
REVISIONS
LTR
A
DESCRIPTION
Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro
DATE (YR-MO-DA)
11-08-16
APPROVED
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
RICK C. OFFICER
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
CHARLES E. BESORE
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
93-01-20
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, LOW POWER BUFFER
AMPLIFIER, MONOLITHIC SILICON
AMSC N/A
REVISION LEVEL
A
SIZE
A
CAGE CODE
67268
SHEET
1 OF 9
5962-90509
DSCC FORM 2233
APR 97
5962-E259-11
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
5962-90509
01
P
A
Drawing number
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
EL2002A
EL2002
Circuit function
Low power buffer amplifier
Low power buffer amplifier
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
P
2
Descriptive designator
GDIP1-T8 or CDIP2-T8
CQCC1-N20
Terminals
8
20
Package style
Dual-in-line
Square leadless chip carrier
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Total supply voltage ( +V
S
to –V
S
) ............................................................................... 36 V
Supply voltage ( V
S
) .....................................................................................................
18
V dc
Input voltage ( V
IN
) ......................................................................................................
15
V dc or V
S
1/
Input current ( I
IN
) ........................................................................................................
Output short circuit duration ..........................................................................................
Junction temperature (T
J
) .............................................................................................
Storage temperature range ...........................................................................................
Lead temperature (soldering, 10 seconds) ....................................................................
Thermal resistance, junction-to-case (
JC
) ...................................................................
50
mA 1/
Continuous 2/
+175C
-65C to +150C
+300C
See MIL-STD-1835 3/
Thermal resistance, junction-to-ambient (
JA
) : 3/
Case P ....................................................................................................................... +125C/W
Case 2 ....................................................................................................................... +100C/W
______
1/ If the input exceeds the ratings shown (or the supplies), or if the input to the output voltage exceeds
7.5
V, then the
input current must be limited to
50
mA.
2/ A heat sinking is required to keep the junction temperature below the absolute maximum when the output is short
circuited.
3/ The maximum power dissipation depends on package type, ambient temperature, and heat sinking.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-90509
SHEET
A
2
1.4 Recommended operating conditions.
Supply voltage ( V
S
) .....................................................................................................
15
V dc
Ambient operating temperature range (T
A
) ................................................................... -55C to +125C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for
non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified
Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional
certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program
plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality
Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or
function of the device. These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 is required to identify when the QML flow option is used.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-90509
SHEET
A
3
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55C
T
A
+125C
V
S
=
15
V, R
S
= 50
unless otherwise specified
Group A Device
subgroups type
Limits 1/
Unit
Min
1
2,3
1
2,3
02
01
-15
-20
-40
-50
01
-10
-15
02
-15
-20
All
1
0.1
All
0.990
0.985
0.85
0.83
0.83
0.80
All
+10
+9.5
Max
+15
+20
+40
+50
+10
+15
+15
+20
M
A
mV
Offset voltage
V
OS
V
IN
= 0 V, R
L
=
Input current
I
IN
V
IN
= 0 V, R
L
=
1
2,3
1
2,3
Input resistance
R
IN
V
IN
=
12
V, R
L
= 100
1
2,3
Voltage gain
A
V1
V
IN
=
12
V, R
L
=
1
2,3
V/V
A
V2
V
IN
=
10
V, R
L
= 100
1
2,3
A
V3
V
IN
=
3
V, R
L
= 100
,
V
S
=
5
V
1
2,3
1
2,3
Output voltage swing
+V
O
V
IN
= +12 V, R
L
= 100
V
-V
O
V
IN
= -12 V, R
L
= 100
1
2,3
-10
-9.5
All
13
15
All
+100
+95
-100
-95
mA
Output resistance
R
OUT
V
IN
=
2
V, R
L
= 100
1
2,3
Output current
+I
OUT
V
IN
= +12 V, V
OUT
= +10 V
1
2,3
-I
OUT
V
IN
= -12 V, V
OUT
= -10 V
1
2,3
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-90509
SHEET
A
4
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
-55C
T
A
+125C
V
S
=
15
V, R
S
= 50
unless otherwise specified
Group A Device
subgroups type
Limits 1/
Unit
Min
1
2,3
All
Max
7.5
10
mA
Supply current
I
S
V
IN
= 0 V, R
L
=
Power supply rejection ratio
PSRR
V
IN
= 0 V, R
L
=
2/
1
2,3
All
60
50
dB
Slew rate
+SR
V
IN
=
10
V, R
L
= 100
,
3/ 4/
A
V
= +1, C
L
= 10 pF,
rising edge
V
IN
=
10
V, R
L
= 100
,
3/ 4/
A
V
= +1, C
L
= 10 pF,
falling edge
V
OUT
= 10 mV, R
L
= 100
,
4/
C
L
= 0 pF
4
5,6
4
5,6
All
1200
800
1200
800
V/s
-SR
-3 dB bandwidth
4,5,6
All
90
MHz
Rise time
t
r
V
IN
= 5 V, R
L
= 100
,
4/
T
A
= +25C
V
IN
= 5 V, R
L
= 100
,
4/
T
A
= +25C
9
All
4.0
ns
Propagation delay
t
d
9
All
4.0
ns
1/
The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum,
is used in this table. Negative current shall be defined as conventional current flow out of a device terminal.
V
OS
is measured at +V
S
= 4.5 V, -V
S
= -4.5 V, and at +V
S
= +18 V, -V
S
= -18 V. Both supplies are changed
simultaneously.
Slew rate is measured between V
OUT
= +5 and -5 V.
If not tested, shall be guaranteed to the limits specified in table I herein.
2/
3/
4/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-90509
SHEET
A
5
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参数对比
与5962-9050901M2X相近的元器件有:5962-9050901M2A、5962-9050901MPX、5962-9050902MPA。描述及对比如下:
型号 5962-9050901M2X 5962-9050901M2A 5962-9050901MPX 5962-9050902MPA
描述 Buffer Amplifier, 1 Func, CQCC20, CERAMIC, LCC-20 Buffer Amplifier, 1 Func, CQCC20, CERAMIC, LCC-20 Buffer Amplifier, 1 Func, CDIP8, CERAMIC, DIP-8 Buffer Amplifier, 1 Func, CDIP8, CERAMIC, DIP-8
包装说明 CERAMIC, LCC-20 CERAMIC, LCC-20 CERAMIC, DIP-8 CERAMIC, DIP-8
Reach Compliance Code unknown unknown unknown unknown
放大器类型 BUFFER BUFFER BUFFER BUFFER
最大输入失调电压 20000 µV 20000 µV 20000 µV 50000 µV
JESD-30 代码 S-CQCC-N20 S-CQCC-N20 R-GDIP-T8 R-GDIP-T8
负供电电压上限 -18 V -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V
功能数量 1 1 1 1
端子数量 20 20 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最小输出电流 0.095 A 0.095 A 0.095 A 0.095 A
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
封装代码 QCCN QCCN DIP DIP
封装形状 SQUARE SQUARE RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
供电电压上限 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V
表面贴装 YES YES NO NO
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 NO LEAD NO LEAD THROUGH-HOLE THROUGH-HOLE
端子位置 QUAD QUAD DUAL DUAL
Base Number Matches 1 1 1 1
厂商名称 ELANTEC (Renesas ) - ELANTEC (Renesas ) ELANTEC (Renesas )
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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