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5962-9062006MYX

Dual-Port SRAM, 2KX8, 35ns, CMOS, CDIP48, CERAMIC, DIP-48

器件类别:存储    存储   

厂商名称:Cypress(赛普拉斯)

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器件参数
参数名称
属性值
零件包装代码
DIP
包装说明
DIP, DIP48,.6
针数
48
Reach Compliance Code
unknown
ECCN代码
3A001.A.2.C
最长访问时间
35 ns
I/O 类型
COMMON
JESD-30 代码
R-GDIP-T48
内存密度
16384 bit
内存集成电路类型
DUAL-PORT SRAM
内存宽度
8
功能数量
1
端口数量
2
端子数量
48
字数
2048 words
字数代码
2000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
2KX8
输出特性
3-STATE
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装等效代码
DIP48,.6
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
筛选级别
MIL-STD-883
最大待机电流
0.015 A
最小待机电流
4.5 V
最大压摆率
0.17 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
Base Number Matches
1
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参数对比
与5962-9062006MYX相近的元器件有:5962-9062005MYX、5962-9062001MYX、5962-9062011MXX、5962-9062009MXX、5962-9062008MXX、5962-9062012MXX、5962-9062007MXX、5962-9062004MYX。描述及对比如下:
型号 5962-9062006MYX 5962-9062005MYX 5962-9062001MYX 5962-9062011MXX 5962-9062009MXX 5962-9062008MXX 5962-9062012MXX 5962-9062007MXX 5962-9062004MYX
描述 Dual-Port SRAM, 2KX8, 35ns, CMOS, CDIP48, CERAMIC, DIP-48 Dual-Port SRAM, 2KX8, 45ns, CMOS, CDIP48, CERAMIC, DIP-48 Dual-Port SRAM, 2KX8, 55ns, CMOS, CDIP48, CERAMIC, DIP-48 Dual-Port SRAM, 2KX8, 45ns, CMOS, CQCC52, CERAMIC, LCC-52 Dual-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, CERAMIC, LCC-52 Dual-Port SRAM, 2KX8, 45ns, CMOS, CQCC52, CERAMIC, LCC-52 Dual-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, CERAMIC, LCC-52 Dual-Port SRAM, 2KX8, 55ns, CMOS, CQCC52, CERAMIC, LCC-52 Dual-Port SRAM, 2KX8, 55ns, CMOS, CDIP48, CERAMIC, DIP-48
零件包装代码 DIP DIP DIP LCC LCC LCC LCC LCC DIP
包装说明 DIP, DIP48,.6 DIP, DIP48,.6 DIP, DIP48,.6 QCCN, QCCN, LCC52,.75SQ QCCN, QCCN, QCCN, LCC52,.75SQ DIP, DIP48,.6
针数 48 48 48 52 52 52 52 52 48
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
最长访问时间 35 ns 45 ns 55 ns 45 ns 35 ns 45 ns 35 ns 55 ns 55 ns
JESD-30 代码 R-GDIP-T48 R-GDIP-T48 R-GDIP-T48 S-CQCC-N52 S-CQCC-N52 S-CQCC-N52 S-CQCC-N52 S-CQCC-N52 R-GDIP-T48
内存密度 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1
端子数量 48 48 48 52 52 52 52 52 48
字数 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words
字数代码 2000 2000 2000 2000 2000 2000 2000 2000 2000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8 2KX8
封装主体材料 CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
封装代码 DIP DIP DIP QCCN QCCN QCCN QCCN QCCN DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR SQUARE SQUARE SQUARE SQUARE SQUARE RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO NO NO YES YES YES YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD THROUGH-HOLE
端子位置 DUAL DUAL DUAL QUAD QUAD QUAD QUAD QUAD DUAL
Base Number Matches 1 1 1 1 1 1 1 1 1
I/O 类型 COMMON COMMON COMMON - COMMON - - COMMON COMMON
端口数量 2 2 2 - 2 - - 2 2
输出特性 3-STATE 3-STATE 3-STATE - 3-STATE - - 3-STATE 3-STATE
封装等效代码 DIP48,.6 DIP48,.6 DIP48,.6 - LCC52,.75SQ - - LCC52,.75SQ DIP48,.6
电源 5 V 5 V 5 V - 5 V - - 5 V 5 V
最大待机电流 0.015 A 0.015 A 0.015 A - 0.015 A - - 0.015 A 0.015 A
最小待机电流 4.5 V 4.5 V 4.5 V - 4.5 V - - 4.5 V 4.5 V
最大压摆率 0.17 mA 0.12 mA 0.12 mA - 0.17 mA - - 0.12 mA 0.12 mA
端子节距 2.54 mm 2.54 mm 2.54 mm - 1.27 mm - - 1.27 mm 2.54 mm
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