V
CE
I
C
=
=
2500 V
1200 A
ABB HiPak
TM
IGBT Module
5SNA 1200E250100
Doc. No. 5SYA 1557-02 July 04
•
Low-loss, rugged SPT chip-set
•
Smooth switching SPT chip-set for
good EMC
•
Industry standard package
•
High power density
•
AlSiC base-plate for high power
cycling capability
•
AlN substrate for low thermal
resistance
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques
1)
2)
2)
1)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FRM
I
FSM
t
psc
V
isol
T
vj
T
vj(op)
T
c
T
stg
M
1
M
2
M
3
Conditions
V
GE
= 0 V
T
c
= 80 °C
t
p
= 1 ms, T
c
= 80 °C
min
max
2500
1200
2400
Unit
V
A
A
V
W
A
A
A
µs
V
°C
°C
°C
°C
Nm
-20
T
c
= 25 °C, per switch (IGBT)
20
11000
1200
2400
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
V
CC
= 1900 V, V
CEM CHIP
≤
2500 V
V
GE
≤
15 V, T
vj
≤
125 °C
1 min, f = 50 Hz
-40
-40
-40
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
4
8
2
11000
10
5000
150
125
125
125
6
10
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1200E250100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1200 A, V
GE
= 15 V
V
CE
= 2500 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
2500
2.2
2.8
typ
max
Unit
V
2.5
3.1
60
2.9
3.4
12
120
500
7.5
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 240 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1200 A, V
CE
= 1250 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 1250 V,
I
C
= 1200 A,
R
G
= 1.5
Ω,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1250 V,
I
C
= 1200 A,
R
G
= 1.5
Ω,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1250 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
Ω,
L
σ
= 100 nH, inductive load
V
CC
= 1250 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
Ω,
L
σ
= 100 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
-500
5
12.2
186
13.7
2.98
375
365
240
250
875
980
300
345
820
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
1150
980
mJ
1250
5800
10
A
nH
mΩ
Turn-off switching energy
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
E
off
I
SC
L
σ
CE
R
CC’+EE’
t
psc
≤
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 1900 V, V
CEM CHIP
≤
2500 V
T
C
= 25 °C
T
C
= 125 °C
0.06
0.085
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 2 of 9
5SNA 1200E250100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 1200 A
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
V
CC
= 1250 V,
I
F
= 1200 A,
V
GE
=
±15
V,
R
G
= 1.5
Ω
L
σ
= 100 nH
inductive load
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1.5
1.4
typ
1.75
1.8
965
1180
680
1150
1250
1710
580
960
max
2.0
2.0
Unit
V
A
µC
ns
mJ
Reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
5)
6)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
Parameter
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
Thermal resistance case
to heatsink
2)
2)
Symbol
R
th(j-c)IGBT
R
th(j-c)DIODE
R
th(c-h)
Conditions
min
typ
max
Unit
0.009 K/W
0.017 K/W
per module,
λ
grease = 1W/m
x
K
0.006
K/W
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Dimensions
Clearance distance
Surface creepage distance
Weight
Symbol
L
x
W
D
C
D
SC
x
Conditions
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
min
23
19
33
32
typ
max
Unit
mm
mm
mm
H Typical , see outline drawing
190
x
140
x
38
1500
g
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 3 of 9
5SNA 1200E250100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 4 of 9
5SNA 1200E250100
2400
2200
2000
25 °C
1800
125 °C
1600
1400
I
C
[A]
1200
1000
800
600
400
200
0
0
1
2
V
CE
[V]
3
4
5
V
GE
= 15 V
I
C
[A]
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
V
GE
[V]
125 °C
25 °C
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
2400
2200
2000
1800
1600
1400
I
C
[A]
1200
1000
800
600
400
200
0
0
1
2
3
V
CE
[V]
4
5
6
9V
I
C
[A]
17 V
15 V
13 V
11 V
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
Tvj = 25°C
200
0
0
1
2
3
V
CE
[V]
4
5
6
T
vj
= 125 °C
17 V
15 V
13 V
11 V
9V
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 5 of 9
